A semiconductor device is disclosed having one or more stops that is configured to limit movement of a moving mass. The one or more stops are formed in or on the semiconductor substrate. The one or more stops are attached to the moving mass. An intermediate layer is formed overlying the semiconductor substrate. A device layer is formed overlying the intermediate layer. The device layer, the intermediate layer, and the semiconductor substrate are single crystal. The moving mass is formed in the device layer with the one or more stops. The one or more stops comprises the material of the device layer. The moving mass couples to at least one anchor. Portions of the intermediate layer are removed to free the moving mass in relation to the semiconductor substrate.

In an embodiment a MEMS sensor arrangement includes a substrate, a pressure sensor structure and a sound transducer structure in a vertically stacked and mechanically coupled configuration, wherein the pressure sensor structure is arranged between the substrate and the sound transducer structure and a through-opening extending through the substrate and the pressure sensor structure and forming a sound-port for the sound transducer structure, wherein the sound transducer structure spans the through-opening, and wherein the pressure sensor structure comprises a pressure sensor element, which is in fluidic connection with the through-opening.