An electronic component comprises a substrate including a main surface on which a functional unit is formed and a cap layer defining a cavity enclosing and covering the functional unit. The cap layer is provided with holes communicating an inside of the cavity with an outside of the cavity. A resin layer covers the cap layer and the main surface and includes one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.

A microelectromechanical systems device includes a vibrator and a reinforcing film. The vibrator includes a piezoelectric element configured to convert pressure to an electrical signal. The reinforcing film is configured to reinforce strength of the vibrator. The vibrator further has a groove at which a portion of the reinforcing film is disposed.

A MEMS pump includes a first substrate, a first oxide layer, a second substrate, a second oxide layer, a third substrate and a piezoelectric element sequentially stacked to form a modular structure. The first substrate has an inlet aperture. The first oxide layer has at least one fluid inlet channel and a convergence chamber. One end of the fluid inlet channel is in communication with the convergence chamber and the other end of the fluid inlet channel is in communication with the inlet aperture. The second substrate has a through hole misaligned with the inlet aperture and in communication with the convergence chamber. The second oxide layer has a gas chamber with a concave central portion. The third substrate has a plurality of gas flow channels misaligned with the through hole. The modular structure has a length, a width and a height.

A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A mirror device manufacturing method includes a forming step of forming a structure by forming a base portion, a movable portion, and a coupling portion coupling the base portion and the movable portion to each other such that the movable portion is able to swing with respect to the base portion through processing of a wafer, and forming a mirror layer in the movable portion; and a collecting step of performing collection of foreign substances from the structure using a collection member after the forming step. A mirror unit manufacturing method includes a sealing step of sealing the mirror device after the collecting step.

The purpose of the present invention is to provide a method for manufacturing a three-dimensionally structured member which can be made by a simpler process. The method for manufacturing a three-dimensionally structured member includes shaping a flat plate-shaped base member to produce a three-dimensionally structured member having a plurality of sections that are different from one another in thickness. The manufacturing method comprises: a mask formation step for forming a mask over the whole of at least one main surface of the base member; a mask removal step for removing a part of the mask; and an etching step for etching an exposed part of the base member wherein a combination of the mask removal step and the etching step is performed on the mask and the base member that correspond to each of the plurality of sections of the three-dimensionally structured member, in the order from thinnest to the thickest of thicknesses of the three-dimensionally structured members.

A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.