B81C2201/0143

Bonding process for forming semiconductor device structure

A semiconductor device structure is provided. The semiconductor device structure includes a first wafer comprising a first face and a second face opposite the first face and having a plurality of predetermined die areas. A plurality of recesses are disposed in the first face of the first wafer. A first recess of the plurality of recesses extends in a direction substantially parallel to a first edge of at least one of the plurality of predetermined die areas and laterally surrounds the at least one of the plurality of predetermined die areas. A second wafer is bonded to the second face of the first wafer.

METHOD FOR PRODUCING MICROSTRUCTURES
20210347637 · 2021-11-11 ·

A method for producing a microstructure in a substrate with a membrane-like bridging or overhanging surface includes modifying the substrate, which is made of glass, by laser radiation along a peripheral contour. A membrane layer is applied over a surface of the substrate for producing the bridging or overhanging surface, wherein, at least in partial surfaces enclosing the peripheral contour of the laser modifications, a sacrificial layer is disposed between the substrate and the membrane layer. A side of the substrate facing away from the membrane layer is exposed to an etching attack such that material is removed primarily along the peripheral contour until the sacrificial layer is reached and there is a disintegration or reduction of the sacrificial layer and a separation of a connection of a part of the substrate enclosed by the peripheral contour from the surrounding substrate and from the membrane layer.

MEMS device with particle filter and method of manufacture
11787689 · 2023-10-17 · ·

A MEMS sensor with a media access opening in its carrier board. The MEMS sensor has an integrally filter mesh closing the media access opening. The mesh can be applied in unstructured form over the whole surface of the carrier board. Then, a structuring is performed to produce preferably at the same time a perforation forming the filter mesh.

Bonding process for forming semiconductor device structure

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

Method for producing fine structures in the volume of a substrate composed of hard brittle material

A method for producing a cavity in a substrate composed of hard brittle material is provided. A laser beam of an ultrashort pulse laser is directed a side surface of the substrate and is concentrated by a focusing optical unit to form an elongated focus in the substrate. Incident energy of the laser beam produces a filament-shaped flaw in a volume of the substrate. The filament-shaped flaw extends into the volume to a predetermined depth and does not pass through the substrate. To produce the filament-shaped flaw, the ultrashort pulse laser radiates in a pulse or a pulse packet having at least two successive laser pulses. After at least two filament-shaped flaws are introduced, the substrate is exposed to an etching medium which removes material of the substrate and widens the at least two filament-shaped flaws to form filaments. At least two filaments are connected to form a cavity.

BONDING PROCESS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
20230365402 · 2023-11-16 ·

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

MICROFLUIDIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
20220258185 · 2022-08-18 ·

A microfluidic device comprising: a first substrate (402,502,602,702,802) having a first assembling side (402a,702a, 802a); and a second substrate (404,504,604,704,804) having a second assembling side (404a, 504a, 604a, 804a) connectable with the first assembling side (402a,702a, 802a) to assemble the first substrate (402,502,602,702,802) and the second substrate (404,504,604,704,804) together. At least one of the first assembling side (402a,702a, 802a) and the second assembling side (404a, 504a, 604a, 804a) has a fluid chamber channel (406,706,806), and after the first substrate (402,502,602,702,802) and the second substrate (404,504,604,704,804) are connected together, the fluid chamber channel (406,706,806) forms a fluid chamber having a fluid inlet (408,608,708,808) and a fluid outlet (410,510,610,710,810). The at least one of the first assembling side (402a,702a, 802a) and the second assembling side (404a, 504a, 604a, 804a) having the fluid chamber channel (406,706,806) has an outlet expansion groove (418,518,618,718,818, 818) adjacent to and extending downstream from the fluid outlet (410,510,610,710,810), and wherein at the fluid outlet (410,510,610,710,810), an outer peripheral profile of the outlet expansion groove (418,518,618,718,818, 818) is located outside an outer peripheral profile of the fluid outlet (410,510,610,710,810).

Bonding pad layer system, gas sensor and method for manufacturing a gas sensor

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

Method for producing microstructures

A method for producing a microstructure in a substrate with a membrane-like bridging or overhanging surface includes modifying the substrate, which is made of glass, by laser radiation along a peripheral contour. A membrane layer is applied over a surface of the substrate for producing the bridging or overhanging surface, wherein, at least in partial surfaces enclosing the peripheral contour of the laser modifications, a sacrificial layer is disposed between the substrate and the membrane layer. A side of the substrate facing away from the membrane layer is exposed to an etching attack such that material is removed primarily along the peripheral contour until the sacrificial layer is reached and there is a disintegration or reduction of the sacrificial layer and a separation of a connection of a part of the substrate enclosed by the peripheral contour from the surrounding substrate and from the membrane layer.

Method for producing microstructures in a glass substrate

A method for producing microstructures includes introducing modifications by a laser beam into a volume between two opposite outer surfaces of a glass substrate. An etching method is carried out which provides anisotropic material removal in one of the outer surfaces so as to produce recesses that have a conical shape. A layer that is resistant to an etching effect of the etching method is applied as a cover layer to only one outer surface. Then, a further etching method is carried out so that material is removed in the other outer surface until recesses of this other outer surface, which are produced and/or enlarged by the further etching method, have reached the cover layer.