For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

Techniques for fabricating a slanted structure are disclosed. In one embodiment, a method for fabricating a slanted structure on a material layer includes forming a mask layer on the material layer, and implanting ions into a plurality of regions of the material layer at a slant angle greater than zero using an ion beam and the mask layer. The slant angle is measured with respect to a surface normal of the material layer. Implanting the ions into the plurality of regions of the material layer changes a refractive index or an etch rate of the plurality of regions of the material layer. In some embodiments, the method further includes wet-etching the material layer using an etchant to remove materials in the plurality of regions of the material layer. In some embodiments, the method includes either simultaneous or post-implantation etching of modified material through a dry etching process using reactive etchants in feed gas.

A method for creating at least one recess, in particular an aperture, in a transparent or transmissive material, includes: selectively modifying the material along a beam axis by electromagnetic radiation; and creating the at least one recess by one or more etching steps, using different etching rates in a modified region and in non-modified regions. The electromagnetic radiation produces modifications having different characteristics in the material along the beam axis such that the etching process in the material is heterogeneous and the etching rates differ from one another in regions modified with different characteristics under unchanged etching conditions.

A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.

A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.

A method for producing a cavity in a substrate composed of hard brittle material is provided. A laser beam of an ultrashort pulse laser is directed a side surface of the substrate and is concentrated by a focusing optical unit to form an elongated focus in the substrate. Incident energy of the laser beam produces a filament-shaped flaw in a volume of the substrate. The filament-shaped flaw extends into the volume to a predetermined depth and does not pass through the substrate. To produce the filament-shaped flaw, the ultrashort pulse laser radiates in a pulse or a pulse packet having at least two successive laser pulses. After at least two filament-shaped flaws are introduced, the substrate is exposed to an etching medium which removes material of the substrate and widens the at least two filament-shaped flaws to form filaments. At least two filaments are connected to form a cavity.

A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.