A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

A method for producing microstructures includes introducing modifications by a laser beam into a volume between two opposite outer surfaces of a glass substrate. An etching method is carried out which provides anisotropic material removal in one of the outer surfaces so as to produce recesses that have a conical shape. A layer that is resistant to an etching effect of the etching method is applied as a cover layer to only one outer surface. Then, a further etching method is carried out so that material is removed in the other outer surface until recesses of this other outer surface, which are produced and/or enlarged by the further etching method, have reached the cover layer.

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

A method includes attaching an upper substrate to an upper surface of a sensor substrate, forming, on an upper surface of the upper substrate, a mask providing a first opening and a second opening communicating with the first opening, the second opening having a width that decreases with increase in a distance from the first opening, carrying out a sandblast process on the upper substrate exposed to an outside via the first opening and the second opening, allowing the sensor substrate to be exposed to the outside immediately below the first opening, and forming a slope on the upper substrate immediately below the second opening, and forming a first wiring member in contact with the exposed sensor substrate and a second wiring member being in contact with the slope and continuing to the first wiring member.

Provided are a hole forming method and a hole forming apparatus capable of stably forming a single nanopore on a membrane. This hole forming method is a hole forming method for forming a hole in a film and includes: a first step of applying a first voltage between a first electrode and a second electrode, installed so as to sandwich the film provided in an electrolyte, and stopping the application of the first voltage when a current flowing between the first electrode and the second electrode reaches a first threshold current so as to form a thin film portion in a part of the film; and a second step of applying a second voltage between the first electrode and the second electrode after the first step so as to form a nanopore in the thin film portion.

Disclosed herein is a microelectrode platform that may be used for multiple biosystem applications including cell culturing techniques and biosensing. Also disclosed are microfabrication techniques for inexpensively producing microelectrode platforms.

This present disclosure provides a microstructure and a method for manufacturing the same. The method includes: disposing a liquid film on a surface of a substrate, wherein a solid-liquid interface is formed where the liquid film is in contact with the substrate; and irradiating the substrate with a laser of a predetermined waveband to etch the substrate at the solid-liquid interface, wherein the position where the laser is irradiated on the solid-liquid interface moves at least along a direction parallel to the surface of the substrate, and the absorption rate of the liquid film for the laser is greater than the absorption rate of the substrate for the laser.

A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.

Disclosed herein is a microelectrode platform that may be used for multiple biosystem applications including cell culturing techniques and biosensing. Also disclosed are microfabrication techniques for inexpensively producing microelectrode platforms.

A semiconductor device structure is provided. The semiconductor device structure includes a first wafer comprising a first face and a second face opposite the first face and having a plurality of predetermined die areas. A plurality of recesses are disposed in the first face of the first wafer. A first recess of the plurality of recesses extends in a direction substantially parallel to a first edge of at least one of the plurality of predetermined die areas and laterally surrounds the at least one of the plurality of predetermined die areas. A second wafer is bonded to the second face of the first wafer.