A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of transferring a two-dimensional material such as graphene onto a target substrate for use in the fabrication of micro- and nano-electromechanical systems (MEMS and NEMS). The method includes providing the two-dimensional material in a first lower state of strain; and applying the two-dimensional material onto the target substrate whilst the two-dimensional material is under a second higher state of strain. A device comprising a strained two-dimensional material suspended over a cavity.

A micromechanical sensor is described that includes: a substrate; a first functional layer that is situated on the substrate; a second functional layer that is situated on the first functional layer and that includes movable micromechanical structures; a cavity in the substrate that is situated below the movable mechanical structures; and a vertical trench structure that surrounds the movable micromechanical structures of the second functional layer and extends into the substrate down to the cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Provided is a method including at least the thermal treatment step of thermally treating a SOI substrate having a first silicon layer at a first temperature that the diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than the diffusion flow rate of an interstitial oxygen atom and the processing step of processing the SOI substrate after the thermal treatment step to obtain a displacement enlarging mechanism.

Example methods, systems, and apparatus described herein provide a minimally invasive technique of controlling shape and stress in a MEMS device. An example method includes depositing a layer of material continuously across a semiconductor wafer, exposing the layer of material to oxygen plasma to increase a relative amount of oxygen within the layer of material; and etching the layer of material after exposing the layer of material to the oxygen plasma.

A method of fabricating a die for a microelectromechanical systems (MEMS) microphone includes the steps of forming a diaphragm, etching a plurality of slots through the diaphragm to define a plurality of springs, releasing the diaphragm and the plurality of springs, wherein the plurality of springs relieves intrinsic stress of the diaphragm, and sealing the plurality of slots with sealing material, thereby disabling the springs.