A semiconductor device is disclosed having one or more anchors that is configured to support a moving mass. The one or more anchors are formed in or on the semiconductor substrate. The one or more anchors are attached to the semiconductor substrate. An intermediate layer is formed overlying the semiconductor substrate. A device layer is formed overlying the intermediate layer. The device layer, the intermediate layer, and the semiconductor substrate are single crystal. The moving mass is formed in the device layer. The at least one anchor comprises a dielectric material coupled to the semiconductor substrate. The moving mass couples to the at least one anchor. Portions of the intermediate layer are removed to free the moving mass in relation the semiconductor substrate.

A method is provided for manufacturing a micromechanical component including a substrate and including a cap, which is connected to the substrate and, together with the substrate, encloses a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity. A first crystalline layer or a first amorphous layer or a first nanocrystalline layer or a first polycrystalline layer is deposited on or grown on a surface of the substrate or of the cap. A recess is introduced into the substrate or into the cap for accommodating the first crystalline layer or the first amorphous layer or the first nanocrystalline layer or the first polycrystalline layer.

A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800 C. to 820 C.

A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800 C. to 820 C.

An all-silicon carbide micro-electro-mechanical system (MEMS) acceleration-pressure integrated sensor chip includes a first patterned silicon carbide plate, a MEMS acceleration sensor chip, a second patterned silicon carbide plate, a MEMS pressure sensor chip and a third patterned silicon carbide plate fixedly connected in sequence. The MEMS acceleration sensor chip has an eight-beam and five-mass-block structure. The MEMS pressure sensor chip includes an arc-shaped cross beam and four circular diaphragms. A method for preparing the integrated sensor chip is also provided.

A method for producing microelectromechanical structures. The method includes: providing a carrier substrate having a central layer, and an insulation layer which is disposed on one side of the central layer and is applied to the surface; applying a silicon layer to the insulation layer; structuring the silicon layer forming trenches through the silicon layer in places; passivating the silicon layer, wherein the trenches are filled and a passivation layer forms; structuring the passivation layer, sacrificial regions and functional regions being formed, the sacrificial regions being free of the passivation layer in places; removing part of the carrier substrate forming a new surface; forming a second insulation layer on the new surface; repeating the applying, structuring and passivating for a second silicon layer on the second insulation layer and structuring for a second passivation layer to form sacrificial regions and functional regions and removing all of the sacrificial regions.

A free-standing microstructure may be formed from an engineered substrate including a first silicon layer, a second silicon layer, and an intermediate layer. The second silicon layer may include a monocrystalline silicon film. The intermediate layer may be between the first silicon layer and the second silicon layer. The intermediate layer may include a silicon- or germanium-based material having a different lattice constant than the first silicon layer or the second silicon layer. The intermediate layer of the free-standing microstructure may further include one or more voids wherein at least a portion of the silicon- or germanium-based material is absent between the first silicon layer and the second silicon layer.

Method for manufacturing a micro-electro-mechanical system, MEMS, integrating a first MEMS device and a second MEMS device. The first MEMS device is a capacitive pressure sensor and the second MEMS device is an inertial sensor. The steps of manufacturing the first and second MEMS devices are, at least partly, shared with each other, resulting in a high degree of integration on a single die, and allowing to implement a manufacturing process with high yield and controlled costs.