The invention concerns a micro check valve (10) comprising a substrate body (12) having a top side (16) and an underside (14), wherein at least the top side (16) has a sealing bar (34) between a first trough (30) and a second trough (32). The substrate body (12) also has a passage (24) which leads from the underside (14) of the substrate body (12) to the top side (16) of the substrate body (12) and ends on the top side (16) of the substrate body (12) in the first trough (30). In addition arranged on the top side (16) of the substrate body (12) is a diaphragm (18) which is mounted flexibly at least in the region of the sealing bar (34) and the first and second troughs (30, 32). The diaphragm (18) also has at least one through opening (42) arranged above the second trough (32).

The invention further concerns a system having a plurality of micro check valves (10) and a method for the production thereof.

A capacitive micromachined ultrasonic transducer including a lower electrode, an upper electrode, and a membrane attached to the upper electrode and positioned between the lower electrode and the upper electrode. Anchors are connect to the membrane and the lower electrode such that a cavity is defined between the lower electrode and the membrane. One or more posts are positioned within the cavity, the posts partially buried within the membrane and extending towards the lower electrode. A method of producing a capacitive micromachined ultrasonic transducer includes forming an oxide growth layer on a device layer of undoped silicon and removing portions of the oxide growth layer to form anchors extending beyond the outer surface of the device layer and posts partially buried within post holes in the device layer and extending beyond the outer surface of the device layer.

A MEMS device comprises a first membrane structure having a reinforcement region formed from one piece of the first membrane structure, wherein the reinforcement region has a larger layer thickness than an adjoining region of the first membrane structure. The MEMS device includes an electrode structure, wherein the electrode structure is vertically spaced apart from the first membrane structure.

A MEMS device includes a substrate which has a first main surface and a second main surface facing the first main surface, and in which a silicon substrate, a silicon carbide layer having conductivity, and a silicon layer are sequentially stacked from a second main surface side toward a first main surface side, a cavity recessed over the silicon layer, the silicon carbide layer, and the silicon substrate from the first main surface of the substrate to the second main surface side of the substrate, a MEMS electrode which is arranged in the cavity, is composed of the silicon layer and the silicon carbide layer, and is spaced apart from a bottom surface of the cavity to the first main surface side, and an isolation joint which divides the MEMS electrode in a plan view and mechanically connects and electrically isolates both sides of the divided MEMS electrode.

The present disclosure relates to an integrated chip structure including a MEMS actuator. The MEMS actuator includes an anchor having a first plurality of branches extending outward from a central region of the anchor. The first plurality of branches respectively include a first plurality of fingers. A proof mass surrounds the anchor and includes a second plurality of branches extending inward from an interior sidewall of the proof mass. The second plurality of branches respectively include a second plurality of fingers interleaved with the first plurality of fingers as viewed in a top-view. One or more curved cantilevers are coupled between the proof mass and a frame wrapping around the proof mass. The one or more curved cantilevers have curved outer surfaces having one or more inflection points as viewed in the top-view.

A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.

Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.

A method for processing a silicon wafer with a through cavity structure. The method is operated in accordance with the following sequence: performing ion implantation on a silicon wafer or pattern wafer; implanting a dummy substrate; bonding the silicon wafer to the pattern wafer; performing grinding and polishing, and thinning the pattern wafer to a depth exposing the pattern; bonding; and peeling the dummy substrate. Compared with the prior art, the present invention is standard in operation, and the product quality can be effectively guaranteed. The product has high cost performance and excellent comprehensive technical effect. The present invention has expectable relatively large economic values and social values.

A method for manufacturing a micromechanical sensor, including the steps: providing a MEMS wafer that includes a MEMS substrate, a defined number of etching trenches being formed in the MEMS substrate in a diaphragm area, the diaphragm area being formed in a first silicon layer that is situated at a defined distance from the MEMS substrate; providing a cap wafer; bonding the MEMS wafer to the cap wafer; and forming a media access point to the diaphragm area by grinding the MEMS substrate.

Disclosed herein is a process flow for forming a MEMS IMU including an accelerometer and a gyroscope each located in a separate sealed cavity maintained at a different pressure. Formation of the MEMS IMU includes the use of a first vHF release to etch a sacrificial layer underneath a structural layer containing the accelerometer and gyroscope and capping the device under formation to set both cavities at a first pressure. The floor of one of the cavities is formed to including a gas permeable layer. Formation further includes forming a chimney underneath the gas permeable layer and then performing a second vHF release to etch through the gas permeable layer and expose the cavity containing the gas permeable layer so that its pressure may be set to be different than that of the other cavity when the chimney is sealed.