Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (MEMS) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.

The present disclosure relates to a method for fabricating a micro-electromechanical system (MEMS) device. In the method, a carrier wafer is received. A MEMS wafer, which includes a plurality of die, is bonded to the carrier wafer. A cavity is formed to separate an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer. A separation trench is formed to laterally surround the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer. The die and carrier wafer are translated with respect to one another to break the tethering structure and separate the die from the carrier wafer.

According to one embodiment, a method for creating a metal nanowire mesh the method includes forming a first layer of block copolymer, causing the block copolymer to become aligned in approximately straight lines, infiltrating one phase of the block copolymer with a metal, and removing the block copolymer where the metal remains after the block copolymer is removed. Furthermore, the method includes forming a second layer of block copolymer, causing the block copolymer in the second layer to become ordered in approximately straight lines oriented at an angle from greater than 0 degrees to 90 degrees from a mean direction of longitudinal axes of the remaining metal, infiltrating one phase of the block copolymer in the second layer with a second metal, and removing the block copolymer in the second layer where the second metal remains above the metal after the block copolymer in the second layer is removed.

An apparatus for sorting macromolecules includes a first chip including a channel formed in a first side of the first chip and having at least one monolithic sorting structure for sorting macromolecules from the sample fluid. A first set of vias formed in the first chip has openings in a second side of the first chip, the sample fluid being provided to the sorting structure through the first set of vias. A second set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid greater than or equal to a prescribed dimension sorted by the sorting structure. A third set of vias formed in the first chip has openings in the second side for receiving macromolecules in the sample fluid less than the prescribed dimension. The apparatus includes first and second seals covering the first and second sides, respectively.

A system and method for creating three-dimensional nanostructures is disclosed. The system includes a substrate bonded to a carrier using a bonding agent. The bonding agent may be vaporizable or sublimable. The carrier may be a glass or glass-like substance. In some embodiments, the carrier may be permeable having one or a plurality of pores through which the bonding agent may escape when converted to a gaseous state with heat, pressure, light or other methods. A substrate is bonded to the carrier using the bonding agent. The substrate is then processed to form a membrane. This processing may include grinding, polishing, etching, patterning, or other steps. The processed membrane is then aligned and affixed to a receiving substrate, or a previously deposited membrane. Once properly attached, the bonding agent is then heated, depressurized or otherwise caused to sublimate or vaporize, thereby releasing the processed membrane from the carrier.

A fabrication method includes: (1) forming a wire array on a fabrication substrate; (2) forming a porous layer within a portion of the fabrication substrate below the wire array; (3) separating the porous layer and the wire array from a remaining portion of the fabrication substrate; and (4) affixing top ends of the wire array to a target substrate.

A method of producing a chip package is described. A plurality of chips is provided on a first wafer. Each chip has a cavity which opens to a first main face of the chip. The cavities are filled or covered temporarily. The chips are then singulated. The singulated chips are embedded in an encapsulation material, and then the cavities are re-exposed.

An electromechanical device includes a stack formed of an insulating layer interposed between two solid layers, and a micromechanical structure of predetermined thickness suspended above a recess of predetermined depth, the recess and the micromechanical structure forming one of the two solid layers of the stack, and the insulating layer forming the bottom of the recess.

Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.