A method of transferring nanomaterials with sugar, the method including: depositing a colloidal sugar layer on a first substrate; pressing a second substrate and a nanomaterial layer located on the second substrate on the colloidal sugar layer, wherein the nanomaterial layer is adhered to the colloidal sugar layer; solidifying the colloidal sugar layer into a solid sugar layer; tearing the second substrate; locating a fourth substrate on the nanomaterial layer; placing the first substrate, the solid sugar layer, the nanomaterial layer and the fourth substrate in a solvent, wherein the solid sugar layer is dissolved in the solvent, and the nanomaterial layer is detached from the first substrate and attached to the fourth substrate.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

A method of forming a space includes a step of tenting, on a substrate having a recessed portion, a dry film including a dry film material that is to be a top plate on the recessed portion. The step of tenting the dry film includes a press period and a release period and performs a press-release cycle of the press period and the release period a plurality of times, a pressed state in which the dry film is pressed against the substrate by using a pressing member is maintained during the press period, and a released state in which the pressed state is released is maintained during the release period.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

A nanoelectronic system comprised of n microelectromechanical or nanoelectromechanical devices arranged on a connection support to electrically connect the n devices, each device with an interaction area, at least one mechanical anchor and a first terminal, a second terminal and a third terminal, the relative arrangement of the first, second and third terminals, the anchor area and the interaction area being identical or similar for the n sensors, the first terminal of each device being intended to recover a signal emitted by each representative device of the interaction area state. At least part of the devices are arranged in such a way that the geometric location of the first terminal of one of the adjacent devices is identical to the geometric location of the first terminal of said other adjacent device, the first terminals being coincident.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

A method for producing a device comprising a membrane of piezoelectric nature above at least one cavity comprises: a) providing a carrier substrate having a cavity opening out onto its front face, the cavity having a lateral dimension larger than 30 m; b) providing a donor substrate having a buried weakened plane delimiting a surface layer; c) depositing, on the front face of the donor substrate, a stiffening layer made of piezoelectric material having a thickness greater than 500 nanometers; d) joining the carrier substrate and donor substrate; and e) splitting the donor substrate at the buried weakened plane so as to transfer the membrane comprising the surface layer and the stiffening layer to the carrier substrate.

The invention preferably relates to a method for producing a MEMS transducer comprising a membrane and a carrier, wherein the membrane exhibits a meander structure comprising vertical and horizontal sections. Here, a shaping component is first provided which is coated with a membrane layer system. The membrane layer system comprises at least one actuator layer comprising an actuator material. By structuring the membrane layer system, membranes are provided which can be attached to a carrier. The shaping component can be completely removed.

Furthermore, the invention preferably relates to a MEMS transducer which can be produced by means of the method.