A monolithic integrated device may include a first device having a complementary metal-oxide-semiconductor (CMOS) substrate, and a second device arranged over the CMOS substrate. The second device may include a first conductive element, and a second conductive element arranged over the first conductive element. A via opening may extend through the first conductive element and the second conductive element of the second device to an interconnect of the CMOS substrate. A via contact may be arranged in the via opening to contact the first conductive element, the second conductive element, and the interconnect of the CMOS substrate. The via contact electrically connects the first conductive element and the second conductive element of the second device to the interconnect of the CMOS substrate.

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A clawless synthetic jet actuator includes a cavity layer having an internal cavity for reception of a fluid volume and an orifice providing a fluid communication between the cavity and an external atmosphere; and an oscillatory membrane having a piezoelectric material adapted to deflect the oscillatory membrane in response to an electrical signal. The cavity has an opening in at least one planar surface of the cavity layer, and the cavity layer and the oscillatory membrane are joined by a high strength, low shear modulus adhesive material with the oscillatory membrane positioned adjacent to the planar surface having the cavity opening and adapted as an enclosing surface to said cavity opening. The oscillatory membrane is adapted to compress and expand a volume within the cavity, based on a deflection generated by the piezoelectric material, for generating a fluid flow between the cavity and the external atmosphere through the orifice.

Disclosed herein are ultrasonic transducer systems with hybrid contacts comprising: an ultrasonic transducer element comprising a substrate and a membrane; an electrical circuitry; and one or more contacts connected to the ultrasonic transducer element and the electrical circuitry, wherein the one or more contacts are: designed geometrically using a set of rules; arranged with respect to the membrane based on the set of rules or a second set of rules, or both.

The invention relates to an ultrasonic transducer comprising an acoustic transformer, wherein the acoustic transformer has a transformer body having a hollow space, and there lies between the hollow space and the medium a membrane, whose center oscillates freely. Furthermore, the invention relates to methods for manufacturing such an acoustic transformer.

A sound transducer, in particular, for an ultrasonic sensor, includes a functional group, the functional group including a diaphragm cup and at least one electroacoustic transducer element. The sound transducer also includes a housing. The diaphragm cup includes a vibratory diaphragm and a circumferential wall, and at least one electroacoustic transducer element, the transducer element being configured to stimulate the diaphragm to vibrate and/or to convert vibrations of the diaphragm into electrical signals. The diaphragm cup is formed from a plastic material, the at least one transducer element being integrated into the vibratory diaphragm, in particular without an additional adhesive layer, the transducer element including a piezoceramic element.

An acoustic microelectronic device includes a support, a set of at least one membrane suspended on a face of the support above a cavity by an anchoring zone, and at least one acoustic insulation trench arranged adjacent to the membrane. The device includes at least one bridge connecting the portions of two opposite edges of the trench and located overhanging at least one zone of the trench so as to form, in the zone of the trench, an acoustic insulation box below the bridge.

Described are transducer assemblies and imaging devices comprising: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A transducer assembly includes: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.