Described are transducer assemblies and imaging devices comprising: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

An ultrasonic transducer, including a piezoelectric element with physical characteristics of radial resonant frequencies and thickness resonant frequencies, and with an upper surface and a lower surface opposite to each other through the piezoelectric element and a lateral surface connecting the upper surface and the lower surface, and an acoustic matching layer set on the upper surface of the piezoelectric element and having a first resonant matching part and a second resonant matching part, wherein a thickness of the first resonant matching part in a direction perpendicular to the upper surface is greater than a thickness of the second resonant matching part in the direction, and the thickness of the first resonant matching part matches one radial resonant frequency of the piezoelectric element and the thickness of the second resonant matching part matches another radial resonant frequency or one of the thickness resonant frequency of the piezoelectric element.

A solid mount resonator sensor has a substrate. An anti-reflector stack is disposed proximate the substrate. The anti-reflector stack includes one or more acoustic interference layers. A first electrode is disposed proximate the anti-reflector stack. A second electrode having a first surface facing towards the first electrode and an opposing second surface facing away from the first electrode. A substantially quarter-wave piezoelectric material layer is disposed between the first and second electrodes.