In a three-dimensional printing method example, a metallic build material is applied. A positive masking agent is selectively applied on at least a portion of the metallic build material. The positive masking agent includes a radiation absorption amplifier that is compatible with the metallic build material. The metallic build material is exposed to radiation from a spatially broad, high energy light source to melt the portion of the metallic build material in contact with the positive masking agent to form a layer. The radiation absorption amplifier i) has an absorbance for the radiation that is higher than an absorbance for the radiation of the metallic build material, or ii) modifies a surface topography of the at least the portion of the metallic build material to reduce specular reflection of the radiation off of the at least the portion of the metallic build material, or both i) and ii).

Disclosed herein are transparent articles and methods and systems for processing transparent articles. Systems for processing transparent articles, e.g. cutting glass, may include at least one initial laser and at least one polarizing beam splitter, where the polarizing beam splitter is configured to split an initial laser beam into a plurality of laser beams, and wherein the plurality of laser beams are useful for processing transparent articles. Methods for processing transparent articles comprise creating at least one flaw in the transparent articles with a plurality of laser beams.

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Forming holes in a material includes focusing a pulsed laser beam into a laser beam focal line oriented along the beam propagation direction and directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material, and translating the material and the laser beam relative to each other, thereby forming a plurality of defect lines in the material, and etching the material in an acid solution to produce holes greater than 1 micron in diameter by enlarging the defect lines in the material. A glass article includes a stack of glass substrates with formed holes of 1-100 micron diameter extending through the stack.

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Semiconductor wafer cutting is optimised by directing a plurality of laser beams at the wafer, with the laser beams being focused so that at least some of their respective focal points are located at different depths throughout the wafer.

An ophthalmic laser system includes a laser engine to generate a beam of femtosecond laser pulses, a laser scanner to scan each laser pulse of the beam in three dimensions according to a scan pattern, and a compound lens comprising a glass lens and a birefringent lens, the compound lens arranged to receive the scanned beam and configured to split each laser pulse of the scanned beam into an ordinary pulse and an extraordinary pulse, producing an ordinary beam comprising ordinary pulses and an extraordinary beam comprising extraordinary pulses. A particular ordinary pulse and a particular extraordinary pulse split from a particular laser pulse are spatially separated in depth along an optical axis of the compound lens, by a distance greater than or equal to 5 m, and temporally separated by a delay greater than or equal to a pulse duration of the femtosecond laser pulses. An objective is configured to focus the ordinary beam and the extraordinary beam within an ophthalmic target.

A laser processing head includes first and second contact points connected to a power source. The power source generates a current to flow through an electrode wire between the first and second contact points to heat the electrode wire. A laser source generates one or more laser beams having lasing power sufficient to at least partially melt the electrode wire. A coaxial laser head focuses the one or more laser beams at one or more focal points on a workpiece to at least partially melt the electrode wire.

A method for laser processing of Silicon includes placing a Kerr material into engagement with the Silicon forming an interface therebetween. A laser beam is applied having at least one subpulse in a burst envelope operating at a first wavelength. The laser beam passes through a distributive lens focusing assembly and to the Kerr material. The first wavelength is modified to a plurality of second wavelengths, some of which are effective for processing Silicon. Photoacoustic compression processing is produced by the laser pulse energy by a portion of second wavelengths delivered through the interface and to the Silicon which initiates Kerr Effect self focusing which is propagated in the Silicon by additional energy input to the Silicon thus producing a filament within the Silicon.

Forming holes in a material includes focusing a pulsed laser beam into a laser beam focal line oriented along the beam propagation direction and directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material, and translating the material and the laser beam relative to each other, thereby forming a plurality of defect lines in the material, and etching the material in an acid solution to produce holes greater than 1 micron in diameter by enlarging the defect lines in the material. A glass article includes a stack of glass substrates with formed holes of 1-100 micron diameter extending through the stack.