A manufacturing method of a conductor pattern includes, preparing a substrate provided with a conductor on one main surface thereof, forming an outline of the conductor pattern on the conductor with a short-pulse laser, and removing at least a part of the conductor other than the conductor pattern by etching.

An epitaxially grown III-V layer is separated from the growth substrate. The III-V layer can be an inverted lattice matched (ILM) or inverted metamorphic (IMM) solar cell, or a light emitting diode (LED). A sacrificial epitaxial layer is embedded between the GaAs wafer and the III-V layer. The sacrificial layer is damaged by absorbing IR laser radiation. A laser is chosen with the right wavelength, pulse width and power. The radiation is not absorbed by either the GaAs wafer or the III-V layer. No expensive ion implantation or lateral chemical etching of a sacrificial layer is needed. The III-V layer is detached from the growth wafer by propagating a crack through the damaged layer. The active layer is transferred wafer-scale to inexpensive, flexible, organic substrate. The process allows re-using of the wafer to grow new III-V layers, resulting in savings in raw materials and grinding and etching costs.

A glass wafer is provided that includes a sheetlike glass substrate with an opening. The sheetlike glass substrate is configured for use in a sensor selected from a group consisting of a pressure sensor, a piezoresistive sensor, a capacitive pressure sensor, and a piezoresistive pressure sensor. The opening is defined in the glass substrate from a first surface to a second, opposite surface. The opening has a cross-sectional area that is delimited by a straight portion having a minimum length of at least 10 μm and a side face with a surface characterized by a skewness (Ssk) of at most 5.0.

A laser irradiation apparatus includes a laser source configured to emit a laser beam to an object that is being conveyed to allow the object to be irradiated with the laser beam; a rotation detector configured to detect rotation of the object to obtain information on the rotation of the object; and circuitry configured to control laser irradiation onto the object based on the information on the rotation of the object.

A method for manufacturing an organic electro-luminescent (EL) element includes: a first process of preparing an organic EL element which includes a positive electrode, an organic layer which includes a light-emitting layer, and a negative electrode, the organic EL element having a short-circuited portion where the positive electrode and the negative electrode are short-circuited; and a second process of emitting femtosecond laser light to at least one of: the transparent electrically conductive material layer and the metal layer in a short-circuited portion; and the transparent electrically conductive material layer and the metal layer around the short-circuited portion to bring the transparent electrically conductive material layer and the metal layer into high-resistance states.

A method for joining two joining partners includes applying a coating to at least one of the two joining partners so as to be arranged between the two joining partners before joining and joining the at least two joining partners to one another using ultrashort laser pulses of a laser beam of an ultrashort pulse laser. At least one joining partner is substantially transparent to the ultrashort laser pulses of the ultrashort pulse laser, and the coating comprises physical properties similar to at least one joining partner and/or a chemical constituent similar to at least one joining partner.

A method for processing a workpiece using a pulsed laser beam includes beam shaping of the laser beam to form an elongated focus zone in the material of the workpiece. The beam shaping is carried out by using an arrangement of diffractive, reflective and/or refractive optical assemblies. The beam shaping includes focus-forming beam shaping to cause beam portions to enter at an entry angle to a beam axis of the laser beam for forming the elongated focus zone along the beam axis in the workpiece by way of interference, and phase-correcting beam shaping to counteract any influence of the interference by entrance of the laser beam into the workpiece. The method further includes setting beam parameters of the laser beam so that the material of the workpiece is modified in the elongated focus zone.

A processing system includes a holding apparatus for hold an object to be rotatable; a rotation apparatus for rotating the holding apparatus; a beam irradiation apparatus for irradiating the object with an energy beam; an object measurement apparatus for measuring the object; and a control apparatus for controlling at least one of the beam irradiation apparatus and the rotation apparatus based on an information related to the object measured by the object measurement apparatus and an information of a rotational axis of the rotation apparatus, and processes the object by irradiating the object held by the holding apparatus with the energy beam from the beam irradiation apparatus.

In a manufacturing method of a semiconductor element of the present disclosure, a first semiconductor part (SL1) includes a protruding portion (TS) protruding toward an underlying substrate (UK), the protruding portion contains a nitride semiconductor, the protruding portion and the underlying substrate are bonded to each other, a semiconductor substrate (HK) includes a hollow portion (TK) located between the underlying substrate and the first semiconductor part, the hollow portion is in contact with a side surface of the protruding portion and communicates with the outside of the semiconductor substrate, and the protruding portion (TS) is irradiated with the laser beam (LZ) before the first semiconductor part is separated from the semiconductor substrate.

A method of separating a substrate includes directing a laser beam into the substrate such that a focal line is formed with at least a portion of the laser beam focal line within a bulk of the substrate at an oblique angle with respect to a laser-incident surface of the substrate. The laser beam focal line is formed by a pulsed laser beam that is disposed along a beam propagation direction. The method further includes pulsing the pulsed laser beam from a first edge of the substrate to a second edge of the substrate in a single pass. The laser beam focal line generates an induced multi-photon absorption within the substrate that produces a damage track within the bulk of the substrate along the laser beam focal line, and the damage track is at an oblique angle relative to the laser-incident surface of the substrate.