Methods are provided for laser processing arbitrary shapes of molded 3D thin transparent brittle parts from substrates with particular interest in substrates formed from strengthened or non-strengthened Corning Gorilla® glass (all codes). The developed laser methods can be tailored for manual separation of the parts from the panel or full laser separation by thermal stressing the desired profile. Methods can be used to form 3D surfaces with small radii of curvature. The method involves the utilization of an ultra-short pulse laser that may be optionally followed by a CO.sub.2 laser for fully automated separation.

Disclosed herein is a laser processing apparatus including a condenser having a function of spherical aberration. Since the condenser has a function of spherical aberration, the focal point of a laser beam to be focused by the condenser and applied to a wafer can be continuously changed in position along the thickness of the wafer. Accordingly, a uniform shield tunnel composed of a fine hole and an amorphous region surrounding the fine hole can be formed so as to extend from, the front side of the wafer to the back side thereof, by one shot of the laser beam.

A method and device for separating a substrate with a laser beam. The duration of the laser beam's effect is extremely short, so the substrate is only modified concentrically about the laser beam axis (Z) without it degrading the substrate material. While the laser beam acts upon the substrate, the substrate moves relative to a laser machining head, producing plural filament-type modifications along a separating surface to be incorporated. The laser beam is initially diverted by a transmission medium having a higher intensity dependent refractive index than air, then reaches the substrate. The non-constant pulsed laser intensity increases to a maximum over the temporal course of the single pulse, then reduces, and the refractive index changes. The laser beam focus point moves between the substrate's outer surfaces along the beam axis (Z), reaching the desired modification along the beam axis (Z) without correcting the laser machining head in the z-axis.

Laser patterning methods utilize a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions to improve cell efficiency by avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

The present disclosure disclosed an ultraviolet laser 3D printing method for the precise temperature control of polymer material and device thereof. The device comprises a thermostat, a laser head, a non-contact type temperature monitoring device, a scanning galvanometer, a processing platform, a powder laying device, a material to be processed, a computer control system and so on. The method comprises: presetting a processing temperature by the control system; during the processing procedure, the temperature rise condition of the processed object is monitored by the non-contact type temperature monitoring device and fed back in real time to the control system; and by recording the rise value of the temperature within a certain period, the system can obtain the absorption capability of the laser and the temperature rise degree of the processed material, so that the laser output power can be calculated according to the preset processing temperature value, and the laser power can be adjusted in real time to precisely control the processing temperature. By means of the above device and method, precise temperature control of ultraviolet laser 3D printing prototyping for polymer materials can be realized.

Metallic nanorods are welded together in a controllable fashion. A suspension of metallic nanorods coated with an anionic polymer is contracted with linking molecules each comprising a liquid crystal with at least two available carboxylic acid moieties. The nanoparticles to self-assemble into dimers. Irradiation of the dimers with femtosecond radiation forms a metallic junction between them and welds the dimers into fused dimers.

Systems and methods are described for forming continuous curved laser filaments in transparent materials. The filaments are preferably curved and C-shaped. Filaments may employ other curved profiles (shapes). A burst of ultrafast laser pulses is focused such that a beam waist is formed external to the material being processed without forming an external plasma channel, while a sufficient energy density is formed within an extended region within the material to support the formation of a continuous filament, without causing optical breakdown within the material. Filaments formed according to this method may exhibit lengths in the range of 100 μm-10 mm. An aberrated optical focusing element is employed to produce an external beam waist while producing distributed focusing of the incident beam within the material. Optical monitoring of the filaments may be employed to provide feedback to facilitate active control of the process.

A method for introducing at least one cutout, in particular in the form of an aperture, into a sheetlike workpiece having a thickness of less than 3 mm, involving detecting a laser beam onto the surface of the workpiece, selecting the exposure time of the laser beam to be extremely short so that only a modification of the workpiece concentrically around a beam axis of the laser beam occurs, such a modified region having defects resulting in a chain of blisters, and, as a result of the action of a corrosive medium, anisotropically removing material by successive etching in those regions of the workpiece that are formed by the defects and have previously been modified by the laser beam, resulting, along the cylindrical zone of action, in producing a cutout as an aperture in the workpiece.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

A method for manufacturing a stone for a timepiece from a mineral body of a monocrystalline type, the stone including a hole, includes ablating the body by scanning at least one face of the body with ultra-short pulse laser radiation from a laser for a duration less than one hundred picoseconds, and guiding a beam of the laser radiation using a precession system of at least three axes configured to at least partially cancel a conical focusing angle of the laser. The ablating includes digging of a cone of entrance to the hole. A mineral stone of monocrystalline type for a timepiece includes a face provided with a hole formed in a body of the stone, and a functional element at an entrance to the hole. The functional element has a shape of a cone.