Embedded die packaging for semiconductor power switching devices, wherein the package comprises a laminated body comprising a layer stack of a plurality of dielectric layers and conductive metal layers. A thermal contact area on a back-side of the die is attached to a leadframe. A patterned layer of conductive metallization on a front-side of the die provides electrical contact areas of the power semiconductor device. Before embedding, a protective dielectric layer is provided on the front-side of the die, extending around edges of the die. The protective dielectric layer provides a protective region that acts a cushion to protect edges of the die from damage during lamination. The protective dielectric material may extend over the electrical contact areas to protect against etch damage and damage during laser drilling of vias, thereby mitigating physical damage, overheating or other potential damage to the active region of the semiconductor device.

Devices and methods for forming a chip package structure including a package substrate, a first adhesive layer attached to a top surface of the package substrate, and a beveled stiffener structure attached to the package substrate. The beveled stiffener structure may include a bottom portion including a tapered top surface, in which a bottom surface of the bottom portion is in contact with the first adhesive layer, a second adhesive layer attached to the tapered top surface, and a top portion including a tapered bottom surface, in which the tapered bottom surface is in contact with the second adhesive layer. The tapered top surface and the tapered bottom surface have a taper angle between 5 degrees and 60 degrees with respect to a top surface of the package substrate.

A conductive member constituting a wiring structure includes a first bonding section bonded to an electronic component, a second bonding section bonded to a connection target for the electronic component, and a raised section that protrudes upward from the first bonding section and is connected to the second bonding section. The conductive member has a wire member passage through which a wire member passes, and which is provided in at least a part of the raised section. The wire member passage enables the wire member to be disposed along the raised section from the first bonding section to the second bonding section such that the wire member intersects a surface of the raised section.

Described herein are integrated circuit (IC) structures, devices, and methods associated with device layer interconnects. For example, an IC die may include a device layer including a transistor array along a semiconductor fin, and a device layer interconnect in the transistor array, wherein the device layer interconnect is in electrical contact with multiple different source/drain regions of the transistor array.

An interconnected semicondcutor subassembly structure and formation thereof. The interconnected semicondcutor subassembly structure includes an interconnect structure, and first and second semicondcutor dies bonded to respective portions of a top surface of the interconnect structure. The interconnected semicondcutor subassembly structure further includes an underfill layer formed within a first gap located between a bottom surface of the first semiconductor die and the first portion the top surface of the interconnect structure, formed within a second gap located between the bottom surface of the second semiconductor die and the second portion of the top surface of the interconnect structure, and formed within a first portion of a third gap located between the first semicondcutor die and the second semicondcutor die. A top surface of the underfill layer formed within the first portion of the third gap located between the first and second semicondcutor dies has a concave meniscus shape.

A method of manufacturing a semiconductor package of stacked semiconductor chips includes forming a reverse wire bond by bonding one end of a reverse wire to a chip pad of the second-highest semiconductor chip of the stacked semiconductor chips and connecting the other end of the reverse wire to a conductive bump on a chip pad of the uppermost semiconductor chip of the stacked semiconductor chips. The method also includes molding the stacked semiconductor chips with the reverse wire bond using a mold layer. The method further includes processing the mold layer to expose the conductive bump and the other end of the reverse wire in the reverse wire bond through an upper surface of the mold layer.

A package comprises an interposer, comprising an interposer substrate including at least one layer, and a plurality of RDLs formed through at least a portion of the interposer substrate. The package also includes a die device structure comprising at least one device die, and a first test line (TL) structure interposed between the interposer and the die device structure. The first TL structure includes at least one first test line electrically coupled to the at least one device die, at least a portion of the at least one first test line extending beyond a peripheral edge of the die device structure to provide an electrical interface with the at least one device die.

A package structure includes a circuit substrate, a semiconductor package, a first ring structure and a second ring structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The first ring structure is attached to the circuit substrate and surrounding the semiconductor package, wherein the first ring structure includes a central opening and a plurality of corner openings extending out from corners of the central opening, the semiconductor package is located in the central opening, and the plurality of corner openings is surrounding corners of the semiconductor package.

A package substrate and a semiconductor package including the same are provided. The semiconductor package includes a package substrate including a base having a front side and a back side, rear pads below the back side of the base, lower connection patterns below the rear pads and in contact with the rear pads, first and second front pads on the front side of the base, a first support pattern on the front side of the base having a thickness greater than a thickness of each of the first and second front pads, and a protective insulating layer on the front side of the base and having openings exposing the first and second front pads respectively, and on an upper surface and a side surface of the first support pattern; a lower semiconductor chip on the protective insulating layer of the package substrate, spaced apart from the first support pattern in a horizontal direction; and a first upper semiconductor chip on the package substrate vertically overlapping the lower semiconductor chip and the first support pattern.

Provided is a package structure, including a substrate, a chip on the substrate in a flip-chip manner, the chip including a circuit layer, and a side heat dissipator on a side of the chip, the side heat dissipator comprising a heat conduction material, wherein the side heat dissipator is electrically connected to the circuit layer.