Disclosed herein is a multi-die device, and an integrated chip package assembly having the multi-die device. The multi-die device includes a first IC die and a second IC die disposed at a same tier; a first conductive pillar coupled with the first IC die; a second conductive pillar coupled with the second IC die; and an interconnecting die disposed between the first conductive pillar and the second conductive pillar and configured to couple with the first IC die and the second IC die. The multi-die device further includes a first interconnecting interface disposed on the first IC die; a second interconnecting interface disposed on the second IC die, the first interconnecting interface and the second interconnecting interface being separated by a molding material.

A semiconductor device assembly can include an assembly substrate having a top surface, a top semiconductor device having a bottom surface, and a plurality of intermediary semiconductor devices. Each of intermediary semiconductor device can be bonded to both the assembly substrate top surface and the top device bottom surface. Each intermediary semiconductor device can also include a semiconductor substrate, a memory array, a first bond pad, a second bond pad, and a conductive column. The first bond pad can electrically couple the assembly substrate to the intermediary semiconductor device; the second bond pad can electrically couple the top semiconductor device to the intermediary semiconductor device; and the conductive column can electrically couple the first bond pad to the second bond pad, and can be exclusive of any electrical connection to the memory array.

A semiconductor device has a first RDL substrate with first conductive pillars formed over a first surface of the first RDL substrate. A first electrical component is disposed over the first surface of the first RDL substrate. A hybrid substrate is bonded to the first RDL substrate. An encapsulant is deposited around the hybrid substrate and first RDL substrate with the first conductive pillars and first electrical component embedded within the encapsulant. A second RDL substrate with second conductive pillars formed over the second RDL substrate and second electrical component disposed over the second RDL substrate can be bonded to the hybrid substrate. A second RDL can be formed over a second surface of the first RDL substrate. A third electrical component is disposed over a second surface of the first RDL substrate. A shielding frame is disposed over the third electrical component.

An offset interposer includes a land side including land-side ball-grid array (BGA) and a package-on-package (POP) side including a POP-side BGA. The land-side BGA includes two adjacent, spaced-apart land-side pads, and the POP-side BGA includes two adjacent, spaced-apart POP-side pads that are coupled to the respective two land-side BGA pads through the offset interposer. The land-side BGA is configured to interface with a first-level interconnect. The POP-side BGA is configured to interface with a POP substrate. Each of the two land-side pads has a different footprint than the respective two POP-side pads.

A fan-out wafer level packaging (FOWLP) unit which includes a substrate, a first dielectric layer, at least one antenna, at least one die, a second dielectric layer, at least one conductive pillar, a plurality of first conductive circuits, a third dielectric layer, a plurality of second conductive circuits, and an outer protective layer is provided. The first conductive circuits and the second conductive circuits are produced by filling a metal paste into slots and grinding the metal paste. The die is electrically connected with the antenna. The die is electrically connected to the outside through bonding pads around a chip area on a second surface of the die. Thereby the FOWLP unit is formed and problems of the FOWLP module or technology available now generated during manufacturing of the respective conductive circuits including higher manufacturing cost and less environmental benefit can be solved.

A method for fabricating a semiconductor wafer may etch a surface of a silicon substrate to form a first cavity and a second cavity. The method may apply a first dielectric layer to the surface of the silicon substrate, the first cavity, and the second cavity. The method may affix a first die into the first cavity of the silicon substrate. The method may affix a second die into the second cavity of the silicon substrate. The method may apply a second dielectric layer to the surface of the silicon substrate, an exposed surface of the first die, and an exposed surface of the second die. The method may form a redistribution layer over the second dielectric layer, where the redistribution layer is configured to electrically couple the first die to the second die.

A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first heat conductive layer between the heat-spreading wall structure and the chip. The chip package structure includes a second heat conductive layer over the chip and surrounded by the first heat conductive layer. The chip package structure includes a heat-spreading lid over the substrate and covering the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.

A semiconductor package comprises a base substrate, a first semiconductor chip on the base substrate, a first dam structure which overlaps a corner of the first semiconductor chip from a plan view and is placed on the base substrate and a first fillet layer which is placed vertically between the base substrate and the first semiconductor chip, and vertically between the first dam structure and the first semiconductor chip.

In one example, an electronic device comprises a substrate comprising a conductive structure and an inner side and an outer side, a first electronic component over the inner side of the substrate and coupled with the conductive structure, a lid over the substrate and the first electronic component and comprising a first hole in the lid, and a thermal interface material between the first electronic component and the lid. The thermal interface material is in the first hole. Other examples and related methods are also disclosed herein.

A semiconductor package is provided. The semiconductor package includes: a lower equipotential plate provided in a lower wiring layer; an upper equipotential plate provided in an upper wiring layer; a pair of differential signal wiring lines provided in a signal wiring layer that is between the lower equipotential plate and the upper equipotential plate, wherein the pair of differential signal wiring lines includes a first differential signal wiring line and a second differential signal wiring line which are spaced apart from each other and extend in parallel; and a wiring insulating layer surrounding the pair of differential signal wiring lines, and filling between the signal wiring layer, the lower wiring layer, and the upper wiring layer. The wiring insulating layer includes a first wiring insulating layer surrounding the pair of differential signal wiring lines, and a second wiring insulating layer, and the first wiring insulating layer and the second wiring insulating layer include different materials.