Embedded die packaging for semiconductor power switching devices, wherein the package comprises a laminated body comprising a layer stack of a plurality of dielectric layers and conductive metal layers. A thermal contact area on a back-side of the die is attached to a leadframe. A patterned layer of conductive metallization on a front-side of the die provides electrical contact areas of the power semiconductor device. Before embedding, a protective dielectric layer is provided on the front-side of the die, extending around edges of the die. The protective dielectric layer provides a protective region that acts a cushion to protect edges of the die from damage during lamination. The protective dielectric material may extend over the electrical contact areas to protect against etch damage and damage during laser drilling of vias, thereby mitigating physical damage, overheating or other potential damage to the active region of the semiconductor device.

Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a gate structure over a semiconductor substrate, having a low-k dielectric layer, a high-k dielectric layer, a p-type work function metal layer, an n-type work function metal layer, a silicon oxide scap layer, and a glue layer; and a continuous tungsten (W) cap over the gate structure that was formed by the gate structure being pretreated, W material being deposited and etched back, the scap layer being etched, additional W material being deposited, and unwanted W material being removed. A semiconductor fabrication method includes: receiving a gate structure; pretreating the gate structure; depositing W material on the gate structure; etching back the W material; etching the scap layer; depositing additional W material; and removing unwanted W material.

Described herein are integrated circuit (IC) structures, devices, and methods associated with device layer interconnects. For example, an IC die may include a device layer including a transistor array along a semiconductor fin, and a device layer interconnect in the transistor array, wherein the device layer interconnect is in electrical contact with multiple different source/drain regions of the transistor array.

Provided is a semiconductor device which includes: a 1.sup.st source/drain region; a 2.sup.nd source/drain region with a 2.sup.nd contact plug thereon; a 3.sup.rd source/drain region; a 2.sup.nd metal line on the 2.sup.nd contact plug with a 2.sup.nd via therebetween; a 1.sup.st additional metal line on the 2.sup.nd contact plug with a 1.sup.st additional via therebetween, wherein the 2.sup.nd source/drain region is disposed between and connected to the 1.sup.st source/drain region and the 3.sup.rd source/drain region, and wherein the 2.sup.nd metal line and the 1.sup.st additional metal line are spaced apart from each other on the 2.sup.nd contact plug by a 1.sup.st predetermined distance in a 2.sup.nd horizontal direction.

A semiconductor structure and method of forming the same are provided. The semiconductor structure has a conductive structure. The semiconductor structure includes a first conductive line, a second conductive line, a third conductive line and a conductive via. The first conductive line and the second conductive line are located in a first dielectric layer and extend along a first direction. The first conductive line and the second conductive line are spaced from each other by the first dielectric layer therebetween. The third conductive line is located in a second dielectric layer and extends along a second direction. The conductive via is vertically between the first conductive line and the third conductive line, and between the second conductive line and the third conductive line. The conductive via, in a vertical direction, is overlapped with a portion of the first dielectric layer that is laterally between the first conductive line and the second conductive line.

An electrical connection structure includes a dielectric layer stack of a plurality of dielectric layers including a first dielectric layer as an uppermost layer, and a second dielectric layer under the first dielectric layer, a plurality of metal layers in the plurality of dielectric layers, a via stack in the plurality of dielectric layers that connects the plurality of metal layers, an upper metal layer on the dielectric layer stack over the via stack, and an upper dielectric layer on the dielectric layer stack and including an upper dielectric layer opening over the upper metal layer and the via stack. A number of first vias in the first dielectric layer, may be less than or equal to a number of second vias in the second dielectric layer, and the number of second vias in the second dielectric layer may be less than or equal to 3.

The present disclosure provides a semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer, and a carrier structure. The intervening bonding layer is positioned on the die stack. The carrier structure is disposed on the intervening bonding layer opposite to the die stack. The carrier structure includes a heat dissipation unit configured to transfer heat generated from the die stack. The heat dissipation unit includes composite vias and conductive plates. Each of the composite vias includes a first through semiconductor via and a second through semiconductor via. The conductive plates are couple to the composite vias.

In one example, a semiconductor structure or device comprises a substrate comprising a conductive structure having a top side and a first shielding terminal on the top side of the conductive structure, an electronic component on the top side of the conductive structure, a package body on the top side of the conductive structure and contacting a side of the electronic component, a shield on a top side of the package body and a lateral side of the package body, and a shield interconnect coupling the shield to the first shielding terminal of the conductive structure. Other examples and related methods are also disclosed herein.

A method for forming an integrated circuit. The method includes providing a semiconductor structure comprising: (i) two transistors, (ii) a gate on the channel of the transistor, (iii) contacts coupled to each transistor, (iv) a dielectric layer over the two transistors, the gate, and the contacts, (v) a first conductive line arranged within a first metallization level and extending along a first direction, (vi) a first conductive via connecting the first conductive line with a first contact of a transistor, and (vii) a second conductive via connecting the first conductive line with a second contact of a transistor. The method also includes recessing the first dielectric layer, providing spacers along the first conductive line, depositing a second dielectric layer on the first dielectric layer, forming an opening in the second dielectric layer and first dielectric layer, and providing a conductive material in the opening, thereby forming a third conductive via.

The semiconductor structure includes a die structure including: a substrate, a first dielectric disposed over the substrate, a first interconnect structure disposed within the first dielectric, a second dielectric disposed on the first dielectric, and a conductive pad surrounded by the second dielectric; a capping member surrounding the die structure; and an insulating member surrounding the capping member, wherein the capping member includes a first oxynitride layer in contact with the die structure or the insulating member.