A chip structure having an interconnect and a manufacturing method thereof include a buffer layer formed between an upper metal structure and a passivation layer under the upper metal structure so as to prevent fractures, such as cracks, from occurring in the passivation layer due to difference of stress between the upper metal structure and the passivation layer.

A low warpage chip includes a chip body, a plurality of signal contacts, and an anti-warpage layer. The chip body has a back surface and an active surface opposite to each other and has a circuit layer inside. The plurality of signal contacts are configured on the active surface and are electrically connected to the circuit layer. The anti-warpage layer covers at least a part of the back surface. A thermal expansion coefficient of the anti-warpage layer is greater than a thermal expansion coefficient of the chip body. When the low warpage chip undergoes a thermal processing procedure, the anti-warpage layer mitigates the warpage of the chip body to maintain the chip body in a relatively flat state.

A method of manufacturing a semiconductor package includes the following steps. A first integrated circuit is encapsulated by a first encapsulant. A first passivation layer is formed over the first integrated circuit and the first encapsulant. A first thermal pattern is formed in the first passivation layer. A second passivation layer is formed on the first passivation layer and the first thermal pattern, wherein the first thermal pattern is exposed by a first opening of the second passivation layer. A second integrated circuit is adhered to the second passivation layer through an adhesive layer, wherein the adhesive layer is partially disposed in the first opening of the second passivation layer.

In an embodiment, a device includes: a die stack over and electrically connected to an interposer, the die stack including a topmost integrated circuit die including: a substrate having a front side and a back side opposite the front side, the front side of the substrate including an active surface; a dummy through substrate via (TSV) extending from the back side of the substrate at least partially into the substrate, the dummy TSV electrically isolated from the active surface; a thermal interface material over the topmost integrated circuit die; and a dummy connector in the thermal interface material, the thermal interface material surrounding the dummy connector, the dummy connector electrically isolated from the active surface of the topmost integrated circuit die.

A packaged chip and a method for manufacturing the packaged chip are provided. The packaged chip includes a substrate, a chip, and a heat sink. The heat sink includes a first bracket, a second bracket, and a cover. The first bracket and the second bracket are disposed on the substrate. The cover is supported on the substrate by the first bracket and the second bracket. The first bracket is a sealed annular bracket. The first bracket and the cover encircle a first space. The chip is accommodated in the first space. A thermal interface material is disposed between the chip and the cover. A hole connected to the first space is provided on the cover. The hole and the first space are filled with a filling material. The second bracket is located outside the first space.

The present application relates to the technical filed of semiconductor chip nanofabrication, provides a method for preparing a chip embedded composite for electron beam lithography. The preparation method includes: providing a composite structure, the composite structure including a first substrate, a conductive layer disposed on a surface of the first substrate and a chip array disposed on a surface of the conductive layer away from the first substrate; arranging a protective layer on an outer surface of the chip array, where the protective layer covers the chip array; encapsulating and curing the composite structure and the protective layer by a polymer solution; removing the protective layer to obtain the chip embedded composite.

Disclosed are a Schottky diode and a manufacturing method thereof. The Schottky diode includes a substrate, a first semiconductor layer, a heterostructure layer, a passivation layer, and a cap layer stacked in sequence. The passivation layer includes a first groove and a second groove, and the first groove and the second groove penetrate through at least the passivation layer. A first electrode is arranged at least on the cap layer corresponding to the first groove; a second electrode is arranged in the second groove. A Schottky contact is formed between the first electrode and the cap layers, so that a direct contact area between the first electrode and the heterostructure layer may be avoided, a contradiction between the forward turn-on voltage and the reverse leakage of the Schottky diode may be balanced, and a leakage characteristic of the heterostructure layer in a high temperature environment may be suppressed.

A method of forming one or more semiconductor packages includes mounting one or more semiconductor dies on the metal strip such that the one or more semiconductor dies are in a flip chip arrangement whereby terminals of the one or more semiconductor dies face the upper surface of the metal strip, forming an electrically insulating encapsulant material on the upper surface of the metal strip that encapsulates the one or more semiconductor dies, and forming package terminals that are electrically connected with the terminals of the one or more semiconductor dies, wherein the package terminals are formed from the metal strip or from metal that is deposited after removing the metal strip.

A method of forming one or more semiconductor packages includes mounting one or more semiconductor dies on the metal strip such that the one or more semiconductor dies are in a flip chip arrangement whereby terminals of the one or more semiconductor dies face the upper surface of the metal strip, forming an electrically insulating encapsulant material on the upper surface of the metal strip that encapsulates the one or more semiconductor dies, and forming package terminals that are electrically connected with the terminals of the one or more semiconductor dies, wherein the package terminals are formed from the metal strip or from metal that is deposited after removing the metal strip.

The present invention provides a package structure with an inductor and a manufacturing method thereof, the inductor and the interconnection component are used as n second package module, and stacked with other components such as the first package module to form a stack-like package structure. The first package module is provided with other electronic elements. Then the first and second package modules can be synchronously subjected to package manufacturing, which improves the production efficiency. Additionally, the soldering balls with different heights are formed on the first faces of the interconnecting structural component and the inductive device by adjusting the consumption of soldering paste, which make the second faces of the inductor and the interconnection component are coplanar, then inductor with different heights can form a flat interconnecting plane, which makes the sequential process such as pasting and mounting can be conveniently performed. The process is simplified, and the reliability of the package structure is improved.