A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor. The plug is electrically connected to the first conductor. The first insulator and the second insulator are each formed using a metal oxide including an amorphous structure.

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, the alternating stack having a pair of lengthwise sidewalls that laterally extend along a first horizontal direction and having stepped surfaces in a staircase region, memory openings vertically extending through a memory array region of the alternating stack in which each layer within the alternating stack is present, and memory opening fill structures in the memory openings. Each of the memory opening fill structures includes a vertical stack of memory elements and a vertical semiconductor channel. The stepped surfaces in the staircase region include first vertical steps laterally extending along a first lateral direction which is at an acute angle relative to the first horizontal direction in a plan view along a vertical direction.

A package comprising a substrate and an integrated device coupled to the substrate. The integrated device comprises a die substrate; and a plurality of pillar interconnects comprising a first plurality of pillar interconnects, wherein at least one pillar interconnect from the first plurality of pillar interconnects comprises a planar cross sectional shape that includes a concave portion.

A metal-insulator-metal capacitor (MIMCAP) structure of a semiconductor device is provided. The MIMCAP structure includes a substrate, first and second contacts formed at opposite sides of the substrate to define a MIMCAP region between the first and second contacts, vertical mandrels extending vertically upwardly from an uppermost surface of the substrate within the MIMCAP region and a MIMCAP. The MIMCAP is disposed in operable contact with the first and second contacts, on exposed sections of the uppermost surface of the substrate and over and around the vertical mandrels within the MIMCAP region. The MIMCAP includes horizontal sections between and over the vertical mandrels and outside outermost ones of the vertical mandrels and vertical sections along respective sidewalls of each of the vertical mandrels.

An electronic device (e.g., semiconductor packages, semiconductor devices, semiconductor dice, semiconductor components, etc.) includes metallization or conductive layers that are stacked on non-conductive layers to define electrical pathways through the electronic devices, as well as methods of manufacturing the same. The metallization structures are at least directed to formation of uniform conductive or metal vias of the metallization structure, and to reduce resistance to improve transportation of an electrical signal through the one or more embodiments of the metallization structures of the present disclosure. For example, the metallization structures may include one or more metallization or conductive layers and one or more non-conductive layers that are stacked on one another to provide electrical pathways with reduced resistance to improve electrical performance of the metallization structures.

Disclosed is a bonded structure including an element with a bonding surface, the bonding surface having a dielectric region and a first semiconductor region laterally spaced from the dielectric region. The bonded structure further includes a first die directly bonded to the dielectric region of the element without an intervening adhesive. The bonded structure further includes a second die having a second bonding surface having a second semiconductor region, the second semiconductor region being bonded to the first semiconductor region of the element without an intervening adhesive and without an intervening deposited dielectric material.

A microelectronic device includes a memory array region, an interconnect region, and a control logic region. The memory array region includes a stack structure including tiers each including conductive material and insulative material vertically neighboring the conductive material and conductive routing overlying the stack structure. The interconnect region underlies the memory array region and includes connected bond pads. The control logic region underlies the interconnect region and comprises control logic devices to effectuate control operations for the microelectronic device. The microelectronic device may also include a conductive loop assembly extending, in a looped path, through each of the memory array region, the interconnect region, and the control logic region.

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of dielectric materials interleaved with levels of conductive materials, the levels of conductive materials including a first conductive level and a second conductive level; a memory cell string including a pillar extending in a direction from the first conductive level to the second conductive level, the second conductive level including a side wall; a conductive contact extending in the direction from the first conductive level to the second conductive level and contacting the second conductive level; a first dielectric material between the first conductive level and the conductive contact, the first dielectric material having a first dielectric constant; and a second dielectric material between the first dielectric material and the conductive contact, the second dielectric material having a second dielectric constant, wherein the second dielectric constant is greater than the first dielectric constant.

A method includes forming a first metal line, forming a dielectric layer, with the first metal line being in the dielectric layer, and etching back the first metal line to form a trench in the dielectric layer. A lower part of the first metal line remains under the trench. The method further includes filling a photo sensitive material in the trench, and performing a photolithography process to pattern the photo sensitive material. A via opening is formed in the dielectric layer and the photo sensitive material. A second metal line and a via are formed, wherein the via is formed in the via opening, and the second metal line is over and joined to the via.

Integrated circuitry comprises a stack comprising vertically-alternating insulative tiers and conductive tiers that extend from an array region into a stair-step region. The stair-step region comprises a flight of stairs that comprise treads that individually comprise a target conductive tier. A conductive via extends from directly above, through, and to directly below one of the individual treads to a bottom of the stack. It comprises conductor material that is directly electrically coupled to conductive material that is in the target conductive tier of the one individual tread. The conductive material that is in the target conductive tier of the one individual tread extends upwardly and downwardly from the target conductive tier of the one individual tread and is aside and directly against sidewalls of the conductor material of the conductive via directly above and directly below the target conductive tier of the one individual tread. Other embodiments, including method, are disclosed.