An electronic component includes a plurality of laminated insulating layers, one or more surface conductors formed on a surface of the insulating layer, and an internal conductor formed at a boundary portion between the adjacent insulating layers. A thickness of the surface conductor is larger than a thickness of a thinnest layer of the insulating layers and larger than a thickness of the internal conductor.

Provided is a curable composition for inkjet and air cavity formation, the curable composition capable of forming a cured product layer having a high aspect ratio and capable of enhancing adhesiveness and sealability. A curable composition for inkjet and air cavity formation according to the present invention contains a photocurable compound having a (meth)acryloyl group or a vinyl group and having no cyclic ether group, and a thermosetting compound having no (meth)acryloyl group and having a cyclic ether group, in which a content of the thermosetting compound in 100 wt % of the curable composition for inkjet and air cavity formation is 5 wt % or more, and when a B-staged product is obtained by irradiating the curable composition for inkjet and air cavity formation with light having a wavelength of 365 nm at an illuminance of 2000 mW/cm.sup.2, a viscosity at 40 C. of the B-staged product is 2.510.sup.2 Pa.Math.s or more and 3.010.sup. Pa.Math.s or less.

Provided is a curable composition for inkjet and air cavity formation, the curable composition capable of forming a cured product layer having a high aspect ratio and capable of enhancing adhesiveness and sealability. A curable composition for inkjet and air cavity formation according to the present invention contains a photocurable compound having a (meth)acryloyl group or a vinyl group and having no cyclic ether group, and a thermosetting compound having no (meth)acryloyl group and having a cyclic ether group, in which a content of the thermosetting compound in 100 wt % of the curable composition for inkjet and air cavity formation is 5 wt % or more, and when a B-staged product is obtained by irradiating the curable composition for inkjet and air cavity formation with light having a wavelength of 365 nm at an illuminance of 2000 mW/cm.sup.2, a viscosity at 40 C. of the B-staged product is 2.510.sup.2 Pa.Math.s or more and 3.010.sup. Pa.Math.s or less.

A cooling apparatus for a power module is provided. The cooling apparatus includes: a power module including power element chips, and a circuit substrate bonded to the power element chips; a heat sink in contact with the circuit substrate, the heat sink having through-holes formed therein; and a manifold configured to allow cooling fluid to flow therethrough and including a wall portion in contact with the circuit substrate. The wall portion includes at least two or more extended ends that extend in a flow direction of the cooling fluid, and a closed end connected to each of the extended ends. The extended ends partly or completely overlap the power element chips.

The package-on-package (POP) structure includes a first package unit of three-dimensional fan-out memory chips and a SiP package unit of the two-dimensional fan-out peripheral circuit chip. The first package unit includes: memory chips laminated in a stepped configuration; a molded substrate; wire bonding structures; a first rewiring layer; a first encapsulating layer; and first metal bumps, formed on the first rewiring layer. The SiP package unit includes: a second rewiring layer; a peripheral circuit chip; a third rewiring layer, bonded to the circuit chip; first metal connection pillars; a second encapsulating layer for the circuit chip and the first metal connection pillars; and second metal bumps on the second rewiring layer. The first metal bumps are bonded to the third rewiring layer. Integrating the two package units into the POP is enabled by three rewiring layers and the molded substrate which supports the first package unit during wire bonding process.

A semiconductor package according to some embodiments includes: a first semiconductor die; a plurality of first connection members on the first semiconductor die; a second semiconductor die on the plurality of first connection members; an insulating member spaced apart from the first semiconductor die between the first semiconductor die and the second semiconductor die and that covers at least a portion of a lower surface of the second semiconductor die and the plurality of first connection members; and a molding material that covers at least a portion of the second semiconductor die and is between the first semiconductor die and the second semiconductor die.

Disclosed in the present invention are an electromagnetic shielding structure, a manufacturing method and a communication terminal. The electromagnetic shielding structure comprises a module substrate, which is formed with a plurality of grounding holes penetrating through the module substrate, and the plurality of grounding holes jointly define a mounting area; a device to be shielded, which is attached to the module substrate and located in the mounting area; a plurality of grounding bonding pads, which are respectively arranged in the grounding holes in a penetrating manner; and a plurality of wires, wherein the two ends of each wire are respectively connected to two different grounding bonding pads, such that the plurality of wires jointly form a shielding layer erected above the device to be shielded.

An electronic device package includes a frame, an electronic device mounted to the frame, surface-mount leads, and a gel at least partially filling a cavity between the electronic device and the frame. The electronic device includes electronic circuitry provided on an electronic device substrate, and the surface-mount leads are electrically connected to the electronic circuitry and extend laterally and outwardly from an outer perimeter of the frame. The gel in the cavity covers the electronic circuitry.

A three-dimensional fan-out integrated package structure, a packaging method thereof, and a wireless headset are disclosed. The three-dimensional fan-out integrated package structure includes a first rewiring layer, a second rewiring layer, a metal connection pillar, a first semiconductor chip, a second semiconductor chip, a first filler layer, a first encapsulating layer, a functional chip, a second filler layer, a second encapsulating layer, and metal bumps. By stacking two semiconductor chips, the structure can effectively reduce the packaging area and realize device packaging with high density and high integration, while enabling the minimum line width/line spacing to be reduced to 1.5 m/1.5 m. In addition, the three-dimensional fan-out integrated package structure can simultaneously integrate various functional chips and components such as GPU/PMU/DDR/mm-wave antenna/capacitor/inductor/transistor/flash memory/filter to realize system-level packaging, which not only can reduce cost but also improve the effectiveness of the package structure by using physical isolation to reduce device interference.

A semiconductor processing apparatus includes a supporting platform configured to support a wafer stack structure comprising a first wafer bonded over a second wafer, and an injection device movably disposed above the supporting platform. The injection device includes an edge detector configured to locate a beveled edge between the first wafer and the second wafer, and a plasma injector coupled to the edge detector and configured to perform a plasma treatment over the beveled edge between the first wafer and the second wafer.