A substrate clip for connecting a carrier with an electronic component of a package includes an electrically insulating and thermally conductive sheet and a patterned electrically conductive structure on a main surface of the electrically insulating and thermally conductive sheet. The patterned electrically conductive structure has at least two different connection sections having different thicknesses.

A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.

A package includes a semiconductor die attached to a substrate and a mold body encapsulating the semiconductor die. A first portion of a lead is directly bonded to a contact pad on the semiconductor die with no intervening component between the first portion of the lead and the contact pad. A second portion of the lead extends outside the mold body to form an external terminal of the package. The lead is a dual gauge lead with the first portion of the lead having a thickness perpendicular to the contact pad that is smaller than a thickness of the second portion of the lead extending outside the mold body.

A method of manufacturing a high-frequency device includes mounting a first chip having a first pillar on an upper surface thereof on a metal base, forming an insulator layer covering the first chip on the metal base, exposing an upper surface of the first pillar from the insulator layer, and forming a first wiring connected to the first pillar on the insulator layer and transmitting a high-frequency signal.

According to one embodiment, a semiconductor device includes a bed portion, a semiconductor element, and a connector. The semiconductor element has a first electrode electrically connected to the bed portion and a second electrode facing away from the bed portion. The connector includes a first connection portion with a first surface electrically connected to the second electrode. The first surface is inclined in a direction from an outer edge portion of the first surface toward a center of the first surface. A lead portion of the connector is electrically connected to the first connection portion and spaced away from the bed portion.

An encapsulated integrated circuit includes an integrated circuit (IC) die. An encapsulation material encapsulates the IC die. Within the encapsulation material, a phononic bandgap structure is configured to have a phononic bandgap with a frequency range approximately equal to a range of frequencies of thermal phonons produced by the IC die when the IC die is operating.