Methods of fabricating a 3D semiconductor device including: forming a first level including a first single crystal layer and first transistors, includes a single crystal channel; forming a first metal layer in the first level and a second metal layer overlaying the first metal layer; forming memory control circuits in the first level; forming a second level including second transistors, where at least one of the second transistors includes a metal gate; forming a third level including third transistors; forming a fourth level including fourth transistors, where the second level includes first memory cells, where the fourth level includes second memory cells, where the memory control circuits include control of data written into the first memory cells and into the second memory cells, where at least one of the transistors includes a hafnium oxide gate dielectric.

In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

A semiconductor device has a substrate. The substrate is disposed on a quartz carrier. An electrical component is disposed over the substrate opposite the quartz carrier. An epoxy-solder paste bump is disposed between the substrate and electrical component. The epoxy-solder paste bump comprises an epoxy and a solder powder disposed in the epoxy. Laser energy is applied to a surface of the substrate through the quartz carrier. The laser energy is converted to thermal energy to reflow the solder powder and cure the epoxy.

A semiconductor device includes a bottom die including a first semiconductor layer, and a first redistribution layer (RDL) disposed on a bottom surface of the first semiconductor layer; a top die disposed on a top surface of the first semiconductor layer and including a second semiconductor layer, and a second RDL disposed on the top surface of the first semiconductor layer; a stress control (SC) layer disposed on the top surface of the first semiconductor layer and side surfaces of the top die; and a dielectric layer disposed on the SC layer, wherein the SC layer is configured to apply a compressive stress of at least 100 MPa to the top surface of the first semiconductor layer, or the SC layer is configured to apply a tensile stress of at least 100 MPa to the top surface of the first semiconductor layer.

A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

A semiconductor package may include: a first wiring structure including a first wiring pattern and a first wiring insulating layer surrounding the first wiring pattern; a first semiconductor chip above the first wiring structure; a second semiconductor chip above the first wiring structure and spaced apart from the first semiconductor chip in a horizontal direction; an adhesive layer including a first portion on an upper surface of the first semiconductor chip, and further including a second portion on an upper surface of the second semiconductor chip; a molding member on the first wiring structure and surrounding side surfaces of each of the first semiconductor chip, the second semiconductor chip, and the adhesive layer; and a heat dissipation member on an upper surface of each of the molding member and the adhesive layer.

A driving substrate, a micro LED transfer device and a micro LED transfer method are provided. A side surface of the driving substrate is arranged with a binding metal layer, a positioning layer is arranged around the binding metal layer, and a width of the positioning layer at a position away from the driving substrate is less than that a width at a position close to the driving substrate.

A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.

A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers.