A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and a surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

A semiconductor package includes a redistribution layer including, a first insulating layer including a first trench, a first conductive layer including a first conductive region extending along a top surface of the first insulating layer and a second conductive region disposed inside the first trench, a second insulating layer on the first conductive layer and the first insulating layer, the second insulating layer including a second trench at least partially overlapping the first trench, the second trench exposing a part of the first conductive region and a second conductive layer including a third conductive region extending along a top surface of the second insulating layer and a fourth conductive region disposed on the second conductive region inside a via trench including sidewalls of the first trench and the second trench, and wherein the second and fourth conductive regions have a width in a range of 20 m to 600 m.

A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.

A display device and method for fabrication thereof are provided. The display device includes a first substrate, pixel electrodes on the first substrate, light emitting elements respectively on the pixel electrodes, and including first semiconductor layers, second semiconductor layers, active layers respectively between the first semiconductor layers and the second semiconductor layers, a first light emitting element including a first active layer of the active layers, a second light emitting element including a second active layer of the active layers that is different from the first active layer, a third light emitting element including a third active layer of the active layers that is different from the first and second active layers, and a fourth light emitting element including a fourth active layer of the active layers that is different from the first to third active layers, and a common electrode layer on the light emitting elements.

Disclosed is a semiconductor package comprising a redistribution substrate and a semiconductor chip on the redistribution substrate. The redistribution substrate includes a plurality of first conductive patterns including a pair of first signal patterns that are adjacent to each other, and a plurality of second conductive patterns on surfaces of the first conductive patterns and coupled to the first conductive patterns. The second conductive patterns include a ground pattern insulated from the pair of first signal patterns. The ground pattern has an opening that penetrates the ground pattern. When viewed in plan, the pair of first signal patterns overlap the opening.

A semiconductor device includes a dielectric interposer, a first RDL, a second RDL, and a plurality of conductive structures. The dielectric interposer has a first surface and a second surface opposite to the first surface. The first RDL is disposed over the first surface of the dielectric interposer. The second RDL is disposed over the second surface of the dielectric interposer. The conductive structures are disposed through the dielectric interposer and directly contact the dielectric interposer. The conductive structures are electrically connected to the first RDL and the second RDL. Each of the conductive structures has a tapered profile. A minimum width of each of the conductive structures is proximal to the first RDL, and a maximum width of each of the conductive structures is proximal to the second RDL.

A microelectronic assembly comprises a first microelectronic component; a second microelectronic component under an area of the first microelectronic component and coupled to the first component through first interconnect structures within a central region of the area, and second interconnect structures within a peripheral region of the area, adjacent to the central region. A heterogenous dielectric surface on the first or second component or both and within a gap between the first and second components has a first surface composition within the central region and at least a second surface composition within the peripheral region.

In one example, an electronic device, comprises a substrate comprising a dielectric structure and a conductive structure, an electronic component over a top side of the substrate, wherein the electronic component is coupled with the conductive structure; an encapsulant over the top side of the substrate and contacting a lateral side of the electronic component, wherein the encapsulant comprises a first trench on a top side of the encapsulant adjacent to the electronic component, a lid over the top side of the encapsulant and covering the electronic component; and an interface material between the top side of the encapsulant and the lid, and in the first trench. Other examples and related methods are also disclosed herein.

A memory module, includes a module substrate and at least one semiconductor package on the module substrate that includes a package substrate having a lower surface and an upper surface. First and second groups of lower pads are on the lower surface, and upper pads are on the upper surface and are electrically connected to the lower pads of the first group. A chip structure is on the upper surface of the package substrate and is electrically connected to the upper pads. First connection bumps connect the lower pads of the first group to the module substrate, and second connection bumps connect the lower pads of the second group to the module substrate. The first connection bumps have a first maximum width at a first distance from the package substrate, and the second connection bumps have a second maximum width at a second, shorter distance from the package substrate.