Disclosed herein is a method for manufacturing a semiconductor comprising mechanically connecting one or more separate semiconductor components to a common intermediate carrier, arranging the intermediate carrier with respect to a substrate so that, at least for a majority of the semiconductor components, at least one solder pad of a particular semiconductor component lies opposite a solder pad of the substrate associated therewith forming a solder joint, and connecting mutually associated solder pads of the one or more semiconductor components and the substrate by melting and solidifying a solder material arranged between the mutually associated solder pads. A surface tension of the solder material between the mutually associated solder pads of the substrate and the one or more semiconductor components sets a predetermined position of the intermediate carrier relative to the substrate, in which the one or more semiconductor components assume a target position relative to the substrate.

An exemplary hearing device includes a housing and a chip package disposed within the housing. The chip package may comprise a printed circuit board, an integrated circuit configured to perform an electronic function associated with the hearing device, and a plurality of solder bumps on a bottom surface of the integrated circuit. The plurality of solder bumps may provide conductive connectivity between the integrated circuit and the printed circuit board. The plurality of solder bumps may comprise a first group of solder bumps located within a center region of the bottom surface of the integrated circuit and a second group of solder bumps located within a peripheral region of the bottom surface, the peripheral region surrounding the center region. All signals required for the integrated circuit to perform the electronic function may be provided by way of the first group of solder bumps.

A method of manufacturing an electronic device includes: providing a vapor generating chamber that accommodates a heat transfer fluid; providing a substrate stage within the vapor generating chamber, the substrate stage including a seating surface and suction passages penetrating the substrate stage to be open to the seating surface; loading a substrate on the substrate stage, wherein electronic components are disposed on the substrate via bumps; generating at least a partial vacuum in the suction holes to suction-support the substrate on the seating surface; heating the heat transfer fluid to generate saturated vapor within the vapor generating chamber; and soldering the bumps using the saturated vapor.

A semiconductor chip having at least two electrical contact points which are arranged on a main surface of the semiconductor chip is disclosed, a metallic reservoir layer being applied over the entire surface over or on the electrical contact point. A diffusion barrier layer is applied in direct contact on the metallic reservoir layer, the diffusion barrier layer being arranged offset with respect to the metallic reservoir layer, so that the metallic reservoir layer is partially freely accessible. In this case, the diffusion barrier layer forms an adhesion surface for a solder and/or a first solder component of the solder and/or a second solder component of the solder. Methods for connecting a semiconductor chip to a connection carrier are also given.

A semiconductor device of an embodiment includes: a first semiconductor element; a first insulating resin that seals the first semiconductor element; a wiring substrate having a pad; a first wiring that extends from the first semiconductor element toward the wiring substrate, and has a first head portion and a first column portion, the first column portion connected to the first semiconductor element and the first head portion exposed on a surface of the first insulating resin; and a first conductive bonding agent that electrically connects the first head portion of the first wiring and the pad. When a surface of the first head portion facing a side of the first insulating resin is defined as a first surface. A surface of the first insulating resin on a side of the wiring substrate is defined as a second surface. A distance from a surface of the wiring substrate on a side of the first insulating resin to the first surface is defined as a first distance, and a distance from a surface of the wiring substrate on the side of the first insulating resin to the second surface is defined as a second distance. The first distance is shorter than the second distance.

The present disclosure relates to a flip-chip based moisture-resistant module, which includes a substrate with a top surface, a flip-chip die, a sheet-mold film, and a barrier layer. The flip-chip die has a die body and a number of interconnects, each of which extends outward from a bottom surface of the die body and is attached to the top surface of the substrate. The sheet-mold film directly encapsulates sides of the die body, extends towards the top surface of the substrate, and directly adheres to the top surface of the substrate, such that an air-cavity with a perimeter defined by the sheet-mold film is formed between the bottom surface of the die body and the top surface of the substrate. The barrier layer is formed directly over the sheet-mold film, fully covers the sides of the die body, and extends horizontally beyond the flip-chip die.

A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

Methods, apparatuses, and systems related to an apparatus configured to provide varied connection positions. The varied connection positions may be provided through an alternating pattern of pads and pedestals that are each configured to attach and electrically couple to complementary connection points on a connected device.

A semiconductor package includes a first semiconductor chip including a first semiconductor substrate having a first active surface and a first inactive surface opposite to each other, a plurality of through electrodes penetrating the first semiconductor substrate, and a rear cover layer covering the first inactive surface, a second semiconductor chip stacked on the first semiconductor chip and including a second semiconductor substrate having a second active surface and a second inactive surface opposite to each other, and a front cover layer covering the second active surface, a plurality of signal pad structures penetrating the rear cover layer and the front cover layer to be electrically connected to the plurality of through electrodes, and a plurality of dummy pad structures apart from the plurality of signal pad structures in a horizontal direction, and penetrating the rear cover layer and the front cover layer.

A method of dispensing an underfill material on a semiconductor device package. A substrate having a semiconductor chip electrically connected thereto and offset from the substrate by solder joints is provided. The semiconductor chip has a footprint defined by a length and width of the semiconductor chip. Standoff heights between the substrate and the semiconductor chip are calculated and used to determine a volume of underfill material needed to substantially fill a space between the substrate and the semiconductor chip. The determined volume of underfill material is dispensed on the substrate such that the space between the substrate and the semiconductor chip is substantially filled by the underfill material. The method may allow for improved dispensing an underfill material to substantially fill the space between the substrate and semiconductor chip when variations in standoff height are present.