Disclosed herein is a method for manufacturing a semiconductor comprising mechanically connecting one or more separate semiconductor components to a common intermediate carrier, arranging the intermediate carrier with respect to a substrate so that, at least for a majority of the semiconductor components, at least one solder pad of a particular semiconductor component lies opposite a solder pad of the substrate associated therewith forming a solder joint, and connecting mutually associated solder pads of the one or more semiconductor components and the substrate by melting and solidifying a solder material arranged between the mutually associated solder pads. A surface tension of the solder material between the mutually associated solder pads of the substrate and the one or more semiconductor components sets a predetermined position of the intermediate carrier relative to the substrate, in which the one or more semiconductor components assume a target position relative to the substrate.

Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a substrate, a first integrated circuit die over the substrate including a first recess that penetrates into a first edge of the first integrated circuit die, and a second integrated circuit die over the first integrated circuit die including a second recess that penetrates into a second edge of the second integrated circuit die. The semiconductor device assembly includes a pillar structure that uses the first recess and the second recess to align perimeters of the first integrated circuit die and the second integrated circuit die.

A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.

The technology of this application relates to a board-level structure that includes an upper-layer substrate, a lower-layer substrate, and a plurality of support members that are supported between the upper-layer substrate and the lower-layer substrate. In an example embodiment, a gap exists between the upper-layer substrate and the lower-layer substrate, the gap includes at least one first gap region and at least one second gap region, the first gap region and the second gap region are spaced, a spaced region between the first gap region and the second gap region does not include the first gap region or the second gap region, and a maximum vertical distance between the upper-layer substrate and the lower-layer substrate in the first gap region is less than a minimum vertical distance between the upper-layer substrate and the lower-layer substrate in the second gap region.

A driving substrate, a micro LED transfer device and a micro LED transfer method are provided. A side surface of the driving substrate is arranged with a binding metal layer, a positioning layer is arranged around the binding metal layer, and a width of the positioning layer at a position away from the driving substrate is less than that a width at a position close to the driving substrate.