Disclosed herein is a method for manufacturing a semiconductor comprising mechanically connecting one or more separate semiconductor components to a common intermediate carrier, arranging the intermediate carrier with respect to a substrate so that, at least for a majority of the semiconductor components, at least one solder pad of a particular semiconductor component lies opposite a solder pad of the substrate associated therewith forming a solder joint, and connecting mutually associated solder pads of the one or more semiconductor components and the substrate by melting and solidifying a solder material arranged between the mutually associated solder pads. A surface tension of the solder material between the mutually associated solder pads of the substrate and the one or more semiconductor components sets a predetermined position of the intermediate carrier relative to the substrate, in which the one or more semiconductor components assume a target position relative to the substrate.

In a described example, an apparatus includes: a metal leadframe including a dielectric die support formed in a central portion of the leadframe, and having metal leads extending from the central portion, portions of the metal leads extending into the central portion contacted by the dielectric die support; die attach material over the dielectric die support; a semiconductor die mounted to the dielectric die support by the die attach material, the semiconductor die having bond pads on a device side surface facing away from the dielectric die support; electrical connections extending from the bond pads to metal leads of the leadframe; and mold compound covering the semiconductor die, the electrical connections, the dielectric die support, and portions of the metal leads, the mold compound forming a package body.

Devices and methods for forming a chip package structure including a package substrate, a first adhesive layer attached to a top surface of the package substrate, and a beveled stiffener structure attached to the package substrate. The beveled stiffener structure may include a bottom portion including a tapered top surface, in which a bottom surface of the bottom portion is in contact with the first adhesive layer, a second adhesive layer attached to the tapered top surface, and a top portion including a tapered bottom surface, in which the tapered bottom surface is in contact with the second adhesive layer. The tapered top surface and the tapered bottom surface have a taper angle between 5 degrees and 60 degrees with respect to a top surface of the package substrate.

A method of manufacturing an electronic device includes: providing a vapor generating chamber that accommodates a heat transfer fluid; providing a substrate stage within the vapor generating chamber, the substrate stage including a seating surface and suction passages penetrating the substrate stage to be open to the seating surface; loading a substrate on the substrate stage, wherein electronic components are disposed on the substrate via bumps; generating at least a partial vacuum in the suction holes to suction-support the substrate on the seating surface; heating the heat transfer fluid to generate saturated vapor within the vapor generating chamber; and soldering the bumps using the saturated vapor.

A method of forming a wafer-level package includes singulating a wafer into a plurality of reconstituted integrated circuit dies, affixing a carrier to a front side of the plurality of integrated circuit dies, and forming a laser direct structuring (LDS) activatable resin over a back side of the plurality of integrated circuit dies, over side edges of the plurality of integrated circuit die, and over adjacent portions of the carrier. Desired areas of the LDS activatable resin are activated to form conductive areas within the LDS activatable resin, at least one of the conductive areas associated with each integrated circuit die being formed to contact a respective pad of that integrated circuit die and to run alongside to and in contact with a side of the LDS activatable resin in contact with a side edge of that integrated circuit die.

A package comprising a metallization portion; an integrated device comprising a plurality of pillar interconnects, wherein the integrated device is coupled to the metallization portion through the plurality of pillar interconnects; and an encapsulation layer at least partially encapsulating the integrated device, wherein the encapsulation layer is coupled to the metallization portion.

A method of manufacturing a semiconductor package may include disposing, in a lower mold, a substrate strip in which a plurality of semiconductor chips are arranged in a horizontal direction, providing, in an upper mold, a release film to which a first encapsulant is attached, allowing the upper mold and the lower mold to be proximate to each other such that a first encapsulant is adjacent to an upper surface of each of the plurality of semiconductor chips, injecting a second encapsulant into a space between the upper mold and the lower mold, heating the first encapsulant and the second encapsulant to form a molded structure including a first encapsulating layer and a second encapsulating layer, allowing the upper mold and the lower mold to be spaced from each other such that the molded structure is separated from the release film, and cutting the molded structure.

A reconstituted wafer is formed, which includes a two-dimensional array of interposer dies that are interconnected to one another and a two-dimensional array of semiconductor die sets. The two-dimensional array of interposer dies includes distal redistribution dielectric layers that are composed of dielectric negative photoresist materials and embed distal redistribution wiring interconnects. A lithographic exposure process sequentially lithographically exposes areas of the dielectric negative photoresist materials. Each illumination area includes an entirety of a laterally-sealed area enclosed by a respective edge seal ring structure, and further includes a respective adjacent kerf area such that a double-exposed area is formed between each neighboring pair of interposer dies.

A package structure and a formation method are provided. The method includes forming multiple patterned material elements over a carrier substrate, and the patterned material elements are more thermal conductive than copper. The method also includes forming a protective layer laterally surrounding each of the patterned material elements. The method further includes bonding a chip-containing structure to a first patterned material element of the patterned material elements through dielectric-to-dielectric bonding and metal-to-metal bonding.

A semiconductor package includes: a substrate; four semiconductor chips spaced apart from each other on the substrate, each of the four semiconductor chips including an active surface that is perpendicular to an upper surface of the substrate; wires extending from the active surface of each of the four semiconductor chips, respectively, and electrically connecting the four semiconductor chips and the substrate; and an encapsulant on the substrate and surrounding the four semiconductor chips, wherein upper surfaces and first side surfaces of each of the four semiconductor chips are exposed from the encapsulant.