A semiconductor assembly includes a device carrier that includes a dielectric core region and a plurality of contact pads disposed on an upper surface, a semiconductor device package having a plurality of lower surface terminals, a discrete passive element comprising a main body and a pair of leads, and a region of gap filler material, wherein the semiconductor device package is mounted on the device carrier with the lower surface terminals facing and electrically connected to a group of the contact pads, wherein the discrete passive element is mounted on the device carrier with the pair of leads electrically connecting with contact surfaces on the device carrier, and wherein the region of gap filler material is arranged between a lower surface of the main body and the upper surface of the semiconductor device package and thermally couples the semiconductor device package to the discrete passive element.

A semiconductor substrate includes a plurality of transistors. A first structure is disposed over a first side of the semiconductor substrate. The first structure contains a plurality of first metallization components. A carrier substrate is disposed over the first structure. The first structure is located between the carrier substrate and the semiconductor substrate. One or more openings extend through the carrier substrate and expose one or more regions of the first structure to the first side. A second structure is disposed over a second side of the semiconductor substrate opposite the first side. The second structure contains a plurality of second metallization components.

Semiconductor devices, and related systems and methods, are disclosed herein. In some embodiments, the stacked semiconductor device includes a package substrate having an inner surface, a die stack carried by the inner surface, and a stacked capacitor device carried by the inner surface adjacent to the die stack. The die stack can include one or more semiconductor dies, each of which can be electrically coupled to the inner surface by one or more bond wires and/or solder structures. The stacked capacitor device can include a first capacitor having a lower surface attached to the inner surface of the package substrate, a interposer having a first side attached to an upper surface of the first capacitor, and a second capacitor attached to a second side of the interposer opposite the first side.

An electronic package is provided in which an electronic structure is bonded onto a carrier structure via a plurality of conductive elements, where each of the conductive elements is connected to a single contact of the electronic structure via a plurality of conductive pillars. Therefore, when one of the conductive pillars fails, each of the conductive elements can still be electrically connected to the contact via the other of the conductive pillars to increase electrical conductivity.

In a described example, an apparatus includes: a package substrate with conductive leads; a semiconductor die mounted to the package substrate, the semiconductor die having a first thickness; electrical connections coupling bond pads on the semiconductor die to conductive leads on the package substrate; brackets attached to the package substrate spaced from the semiconductor die and extending away from the package substrate to a distance from the package substrate that is greater than the first thickness of the semiconductor die; and mold compound covering the package substrate, the semiconductor die, the brackets, and the semiconductor die to form a semiconductor device package having a board side surface and a top surface opposite the board side surface, and having portions of the brackets exposed from the mold compound on the top surface of the semiconductor device package to form mounts for a passive component.

Provided is a semiconductor package including a three-dimensional (3D) stacked structure in which an upper second semiconductor chip is stacked on a lower first semiconductor chip. In the semiconductor package, a power distribution network for the first semiconductor chip and a power distribution network for the second semiconductor chip are implemented through circuits of the first semiconductor chip and separated from the first semiconductor chip.

A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

Methods, apparatuses, and systems related to an apparatus configured to provide varied connection positions. The varied connection positions may be provided through an alternating pattern of pads and pedestals that are each configured to attach and electrically couple to complementary connection points on a connected device.

Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die and a through-dielectric via (TDV) surrounded by a dielectric material in a first layer, where the TDV has a greater width at a first surface and a smaller width at an opposing second surface of the first layer; a second die, surrounded by the dielectric material, in a second layer on the first layer, where the first die is coupled to the second die by interconnects having a pitch of less than 10 microns, and the dielectric material around the second die has an interface seam extending from a second surface of the second layer towards an opposing first surface of the second layer with an angle of less than 90 degrees relative to the second surface; and a substrate on and coupled to the second layer.