Provided are a semiconductor structure and a method of forming the same. The semiconductor structure includes: a substrate, an under bump metallurgy (UBM) structure, and a solder. The UBM structure is disposed over the substrate. The UBM structure includes a first metal layer; a second metal layer disposed on the first metal layer; and a third metal layer disposed on the second metal layer. A sidewall of the first metal layer is substantially aligned with a sidewall of the second metal layer, and a sidewall of the third metal layer is laterally offset inwardly from the sidewalls of the first and second metal layers. The solder is disposed on the third metal layer.

An electronic device and a method of manufacturing an electronic device are provided. The electronic device includes a first conductive layer and a first power die. The first conductive layer including a first part and a second part separated from the first part. The first power die is disposed above the first conductive layer and has a first surface. The first power die includes a first terminal exposed from the first surface and a second terminal exposed from the first surface. The first part is electrically connected to the first terminal and the second part is electrically connected to the second terminal.

Systems or methods of the present disclosure may provide communication interfaces for communicatively coupling integrated circuit devices to high bandwidth memory (HBM) devices. In particular, the communication interfaces may support Universal Chiplet Interconnect Express (UCIe) communications between the integrated circuit devices and the HBM devices. The integrated circuit device and the HBM devices may be directly coupled to a communication bridge, such as a package substrate via package substrate bumps. The package substrate may include routing resources that facilitate communications, such as the transmission and reception of UCIe signals, between the integrated circuit device and the HBM device. As a result, the integrated circuit and the HBM devices may engage in low latency communications without demanding any additional hardware interfaces, such as embedded multi-die interconnect bridges (EMIB) or interposers.

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of semiconductor fins having a longest dimension along a first direction. Adjacent individual semiconductor fins of the first plurality of semiconductor fins are spaced apart from one another by a first amount in a second direction orthogonal to the first direction. A second plurality of semiconductor fins has a longest dimension along the first direction. Adjacent individual semiconductor fins of the second plurality of semiconductor fins are spaced apart from one another by the first amount in the second direction, and closest semiconductor fins of the first plurality of semiconductor fins and the second plurality of semiconductor fins are spaced apart by a second amount in the second direction.

A method of manufacturing a semiconductor device is provided. A permalloy device is received. An interposer die is formed. A semiconductor die is bonded to the interposer die. A conductive coil is formed over a substrate. The conductive coil includes a bottom metal layer over the substrate, a middle metal layer and a top metal layer interconnected to each other. The permalloy device is disposed over the bottom metal layer through a pick and place operation. An inter-metal-dielectric layer is formed to laterally surround the permalloy device before forming the middle metal layer of the conductive coil. The permalloy device has a polygonal ring shape wrapped with the conductive coil.

An electronic device includes: a first insulating layer; a first metal bump disposed on the first insulating layer; a second insulating layer disposed on the first metal bump; a metal layer, wherein the first insulating layer is disposed between the second insulating layer and the metal layer; a second metal bump disposed between the metal layer and the first insulating layer, wherein the second metal bump electrically connects to the first metal bump; a third insulating layer disposed between the second metal bump and the first insulating layer, wherein the third insulating layer includes an opening exposing a portion of the second metal bump; and a fourth insulating layer disposed between the third insulating layer and the first insulating layer, wherein a portion of the fourth insulating layer extends and is disposed in the opening to contact the second metal bump.

An embodiment semiconductor device may include a semiconductor die; one or more redistribution layers formed on a surface of the semiconductor die and electrically coupled to the semiconductor die; and an active or passive electrical device electrically coupled to the one or more redistribution layers. The active or passive electrical device may include a silicon substrate and a through-silicon-via formed in the silicon substrate. The active or passive electrical device may be configured as an integrated passive device including a deep trench capacitor or as a local silicon interconnect. The semiconductor device may further include a molding material matrix formed on a surface of the one or more redistribution layers such that the molding material matrix partially or completely surrounds the active or passive electrical device.

A method includes bonding an integrated circuit die to a carrier substrate, forming a gap-filling dielectric around the integrated circuit die and along the edge of the carrier substrate, performing a bevel clean process to remove portions of the gap-filling dielectric from the edge of the carrier substrate, after performing the bevel clean process, depositing a first bonding layer on the gap-filling dielectric and the integrated circuit die, forming a first dielectric layer on an outer sidewall of the first bonding layer, an outer sidewall of the gap-filling dielectric, and the first outer sidewall of the carrier substrate; and bonding a wafer to the first dielectric layer and the first bonding layer, wherein the wafer comprises a semiconductor substrate and a second dielectric layer on an outer sidewall of the semiconductor substrate.

A semiconductor package includes a semiconductor chip on a redistribution substrate and including a body, a chip pad on the body, and a pillar on the chip pad, a connection substrate including base layers and a lower pad on a bottom surface of a lowermost one of the base layers, a first passivation layer between the semiconductor chip and the redistribution substrate, and a dielectric layer between the redistribution substrate and the connection substrate. The first passivation layer and the dielectric layer include different materials from each other. A bottom surface of the pillar, a bottom surface of the first passivation layer, a bottom surface of a molding layer, a bottom surface of the lower pad, and a bottom surface of the dielectric layer are coplanar with each other.

Structures for a photonic chip and associated methods. The structure comprises a photonic chip including a bond pad and forming an electrical interconnection that includes a pillar positioned on the bond pad. The pillar includes a first lobed section, a second lobed section spaced from the first lobed section by a gap, and a connecting section extending across a portion of the gap to connect the first lobed section to the second lobed section.