A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

An electrically non-conducting film (109) comprising an oligomer comprising an arylene or heteroarylene repeating unit is disposed between a chip (105), e.g. a flip-chip, and a functional layer (101), e.g. a printed circuit board, electrically connected to the chip by electrically conducting interconnects (107). The oligomer may be crosslinked.

In an embodiment, a package includes an interposer; a first integrated circuit device attached to the interposer, wherein the first integrated circuit device includes a die and a heat dissipation structure, the die having an active surface facing the interposer and an inactive surface opposite to the active surface, the heat dissipation structure attached to the inactive surface of the die and including a plurality of channels recessed from a first surface of the heat dissipation structure, the first surface of the heat dissipation structure facing away from the die; and an encapsulant disposed on the interposer and laterally around the die and the heat dissipation structure, wherein a top surface of the encapsulant is coplanar with the top surface of the heat dissipation structure.

A substrate includes a ceramic tile and a three-dimensional (3D) conductive structure. The 3D conductive structure includes a planar base layer having a bottom surface bonded to a top surface of the ceramic tile, and a block disposed above the planar base layer. The block is monolithically integrated with the planar base layer. A top surface of the block is configured as a die attach pad. The planar base layer has a base vertical thickness from the top surface of the ceramic tile to a top surface of the planar base layer. The block and the planar base layer have a combined vertical thickness from the top surface of the ceramic tile to a top surface of the block that is greater than the base vertical thickness.

A flip-chip bonding structure includes a substrate and a chip. A lead of the substrate includes a body, a hollow opening, a bonding island and at least one connecting bridge. The hollow opening is in the body and surrounded by the body. The bonding island is located in the hollow opening such that there is a hollow space in the hollow opening and located between the body and the bonding island. The connecting bridge is located in the hollow space to connect the body and the bonding island. A bump of the chip is bonded to the bonding island by a solder. The solder is restricted on the bonding island and separated from the body by the hollow space so as to avoid the solder from overflowing to the body and avoid the chip from shifting.

A double-sided liquid-cooling power module mounted with a plurality of power semiconductor devices, including a watertight housing and a power device package, the power device package including a lower ceramic substrate, a power semiconductor device, a copper saddle-shaped upper guide column, an upper ceramic substrate, a shunt support column, and a resin dielectric package, a bottom surface electrode of the power semiconductor device being correspondingly press-bonded with a silver thin film layer, a top surface electrode being press-bonded with an interfacial silver thin film layer; the power semiconductor device is encapsulated by the resin dielectric package; an electrical conduction loop is formed by press-bonding the power semiconductor device to the lower ceramic substrate via the silver thin film layer and press-bonding the copper saddle-shaped upper column to the power semiconductor device via the silver thin film layer; a double-sided heat dissipation effect is achieved with the watertight housing.

Conductive vias for 3D integration may be formed during or after assembly to couple dies or die stacks. In one example, such conductive vias may extend through the dies or die stacks and through an interface with conductive bumps, without terminating on the bumps. Bypassing conductive bumps with a conductive via may enable improved performance, power delivery, and thermal management. In one example, an assembly includes a first IC structure (such as a substrate, interposer, or other IC structure) and a second IC structure (such as a die or die stack) over the first IC structure. The assembly includes an interface layer between the first IC structure and the second IC structure, where the interface layer includes a plurality of conductive bumps. A conductive via extends through the interface layer with the bumps and is coupled with a conductive element of the first IC structure.

A semiconductor package includes a first substrate having a first surface and a second surface, and having a cavity extending from the first surface to the second surface in a vertical direction, a first chip disposed in the cavity of the first substrate, a redistribution structure on the first surface of the first substrate, a second chip on the redistribution structure, a third chip spaced apart from the second chip in a horizontal direction and disposed on the redistribution structure, and a bridge chip embedded in the redistribution structure, wherein the redistribution structure includes a first redistribution pattern, a second redistribution pattern, and a third redistribution pattern.

A package structure and a method for manufacturing the same, and an electronic device are provided. The package structure includes a substrate, a chip stack, a heat dissipation layer, and a molding layer. The chip stack is disposed on the substrate, the heat dissipation layer is disposed on the chip stack, and the molding layer is disposed on the substrate and covers the chip stack. The molding layer is in contact with the heat dissipation layer, the molding layer and the heat dissipation layer are coplanar, and the thermal conductivity coefficient of the plastic encapsulating layer is less than the thermal conductivity coefficient of the heat dissipation layer.