A semiconductor package according to an embodiment includes a substrate; a protective layer disposed on the substrate; a first adhesive member disposed on the protective layer and having an open loop shape along a circumferential direction of an upper surface of the protective layer; and a cover member disposed on the first adhesive member, wherein a lower surface of the cover member includes: a first lower surface that contacts the first adhesive member, and a second lower surface that does not contact the first adhesive member, and the protective layer includes a first opening that vertically overlaps the second lower surface of the cover member and does not vertically overlap the first adhesive member.

A system includes: an inverter configured to convert DC power to AC power, wherein the inverter includes: a power module including: a first substrate, a second substrate including a source plane and a gate plane separated from the source plane by a full trench, the source plane including a step trench, and the gate plane including an electrical connection through the second substrate to a gate input connection of the power module, a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate plane, and a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate; a battery; and a motor.

A semiconductor device, including a cooling body, a semiconductor unit including a wiring portion electrically connected to a semiconductor chip, and a sealing member sealing the entire semiconductor unit over a cooling surface of the cooling body. The sealing member includes a first portion and a second portion which surrounds the first portion in a plan view. The first portion seals a central portion of a main electrode of the semiconductor chip, and has a first sealing surface opposite the cooling surface of the cooling body. The second portion seals a wiring portion to thereby surround the first portion in the plan view, and has a second sealing surface opposite the cooling surface. A distance in a thickness direction of the semiconductor device from the cooling surface to the first sealing surface, is smaller than a distance in the thickness direction from the cooling surface to the second sealing surface.

A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.

A semiconductor package includes a package substrate, a processor chip mounted on a first region of the package substrate, a plurality of memory chips mounted on a second region of the package substrate being spaced apart from the first region of the package substrate, a signal transmission device mounted on a third region of the package substrate between the first and second regions of the package substrate, and a plurality of first bonding wires connecting the plurality of memory chips to the signal transmission device. The signal transmission device includes upper pads connected to the plurality of first bonding wires, penetrating electrodes arranged in a main body portion of the signal transmission device and connected to the upper pads, and lower pads in a lower surface portion of the signal transmission device and connected to the penetrating electrodes and connected to the package substrate via bonding balls.

Various embodiments of the teachings herein include a sintered power electronic module with a first plane and a second plane different from the first plane. An example comprises: a first substrate with a first metallization arranged on the first plane; a second substrate with a second metallization arranged on the second plane; a switchable die having a first power terminal and a second power terminal, the die arranged between the first substrate and the second substrate; and a surface area of all the sintered connections of the first plane is between 90 and 110% of a surface area of all the sintered connections of the second plane. The first power terminal of the die is joined to the first metallization via a sintered connection in the first plane and the second power terminal is joined to the second metallization via a sintered connection in the second plane.

An electronic module includes at least one electronic component including a first principal surface, first and second electrodes on the first principal surface, a wiring board including a second principal surface, third and fourth electrodes on the second principal surface, and a conductive resin portion. The conductive resin portion includes at least one first conductive resin portion joining the first and third electrodes, and at least one second conductive resin portion joining the second and fourth electrodes. The electronic module further includes at least one reinforcing resin portion that is disposed between at least one first and at least one second conductive resin portions and joins the first principal surface of the electronic component with the second principal surface of the wiring board.

A package structure includes a package substrate. Numerous leads penetrate the package substrate. A top plate is disposed on the package substrate. An extension component extends from the top plate to the package substrate. Four side plates are disposed between the package substrate and the top plate. A die is disposed on the package substrate. The die includes a first surface and a second surface, and the first surface and the second surface are opposite. The extension component is bonded to the first surface of the die through a thermal conductive adhesive. Numerous conductive terminals are disposed on the die and exposed through the first surface. Numerous wires are disposed on the package substrate. Each wire is connected to one of the leads and one of the conductive terminals.

A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a flex circuit coupled to the semiconductor die.

A temperature-sensor assembly comprising at least one temperature sensor and at least one supply line, wherein the temperature sensor has at least one electrically insulating substrate with an upper side and an underside, wherein a temperature-sensor structure with at least one sensor-contact surface is formed at least on parts of the upper side, wherein the supply line has at least one supply-line contact surface, wherein the supply-line contact surface is connected to the sensor-contact surface at least in part by means of a first sinter layer.