A stacked package structure and a forming method thereof are disclosed. The forming method includes mounting a first active surface of a first chip facing down on an upper surface of a substrate; forming a chip stacking structure on a first back surface of the first chip, including a plurality of second chips stacked sequentially in a vertical direction; performing a mass reflow process to solder the micro bumps of the upper second chip to the second connection terminals of the adjacent lower second chip; and performing a molded underfill process to form a molding layer filled between the upper and lower second chips and between the lower second chip and the first chip. This improves packaging efficiency, prevents the micro bumps from collapsing, and ensures evenness during stacking.

A semiconductor package may include a package substrate including first and second surfaces, which are opposite to each other, a first semiconductor chip on the first surface, a first mold layer on the first surface of the package substrate and top and side surfaces of the first semiconductor chip, a second semiconductor chip and a third semiconductor chip stacked on the second surface, a second mold layer on the second surface of the package substrate, bottom and side surfaces of the second semiconductor chip, and bottom and side surfaces of the third semiconductor chip, a vertical conductive pillar provided to penetrate the second mold layer in a vertical direction and horizontally spaced apart from the second and third semiconductor chips, and connection terminals between a bottom surface of the first semiconductor chip and the first surface. The vertical conductive pillar may be placed on the second surface.

A semiconductor package may include a substrate including an upper surface including a first upper pad; first semiconductor chips stacked on the substrate; and a first controller structure in contact with a side surface of at least one of the first semiconductor chips. The first controller structure may include a first controller chip, a first insulating film, and a first conductive film. A first surface of the first controller chip may face a first horizontal direction and may include a first contact pad disposed thereon. The first insulating film may expose the first contact pad and may extend along the first surface of the first controller chip to the substrate. The first conductive film may cover the first contact pad of the first controller chip and the first upper pad of the substrate.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.

The present invention provides a photonic device, comprising a photonic integrated circuit including a waveguide structure having a core layer and a cladding layer surrounding the core layer, a first cavity formed through a top surface of the photonic integrated circuit and at least partly into the cladding layer, an adhesive layer formed on at least a first surface of the first cavity, and a first photonic element arranged in the first cavity and bonded to the adhesive layer on the first surface of the first cavity, wherein at least a portion of the cladding layer and a portion of the adhesive layer define a first coupling region configured to enable coupling of an optical mode between the core layer and the first photonic element through the coupling region. Further the present invention provides a corresponding method for manufacturing a photonic device as well as.

According to one embodiment, a semiconductor device includes a wiring substrate having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface. A first electrode is on the first surface. A semiconductor element is on the wiring substrate and electrically connected to the first electrode. A resin layer covers the semiconductor element and the first surface from a first direction orthogonal to the first surface. A portion of the resin layer contacts the side surface of the wiring substrate from a second direction parallel to the first surface. The resin layer has an outside side surface that is substantially parallel to the first direction.

A power module for a vehicle, includes: a first substrate including a first metal circuit disposed on a 1-1st surface, and a first spacer extending from the first metal circuit in a first direction; a second substrate spaced from and facing the first substrate in a second direction, and including a second metal circuit disposed on a 2-1st surface facing the 1-1st surface, and a second spacer extending from the second metal circuit in the second direction; and a semiconductor chip disposed between the first substrate and the second substrate and including a power pad and a signal pad, the first spacer and the second spacer extending toward each other, and the second spacer including a 2-1st spacer connected to the power pad and a 2-2nd spacer connected to the signal pad.

A package structure includes a die, a first redistribution circuit structure, a first redistribution circuit structure, a second redistribution circuit structure, an enhancement layer, first conductive terminals, and second conductive terminals. The first redistribution circuit structure is disposed on a rear side of the die and electrically coupled to thereto. The second redistribution circuit structure is disposed on an active side of the die and electrically coupled thereto. The enhancement layer is disposed on the first redistribution circuit structure. The first redistribution circuit structure is disposed between the enhancement layer and the die. The first conductive terminals are connected to the first redistribution circuit structure. The first redistribution circuit structure is between the first conductive terminals and the die. The second conductive terminals are connected to the second redistribution circuit structure. The enhancement layer is between the second conductive terminals and the second redistribution circuit structure.

A package comprising a first integrated device; a second integrated device coupled to the first integrated device through an adhesive; a first plurality of wire bonds coupled to the first integrated device; a second plurality of wire bonds coupled to the second integrated device; an encapsulation layer at least partially encapsulating the first integrated device, the second integrated device, the first plurality of wire bonds and the second plurality of wire bonds; and a plurality of pillar interconnects.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.