A self-densifying interconnection is formed between a high-temperature semiconductor device selected from a GaN or SiC-based device and a substrate. The interconnection includes a matrix of micron-sized silver particles in an amount from approximately 10 to 60 weight percent; the micron-sized silver particles having a particle size ranging from approximately 0.1 microns to 15 microns. Bonding particles are used to chemically bind the matrix of micron-sized silver particles. The bonding particles are core silver nanoparticles with in-situ formed surface silver nanoparticles chemically bound to the surface of the core silver nanoparticles and, at the same time, chemically bound to the matrix of micron-sized silver particles. The bonding particles have a core particle size ranging from approximately 10 to approximately 100 nanometers while the in-situ formed surface silver nanoparticles have a particle size of approximately 3-9 nanometers.

An anisotropic conductive film includes conductive particles disposed in an insulating resin layer. Zigzag arrangements are arranged at a predetermined pitch in an x direction on an xy plane in a plan view of the anisotropic conductive film with positions thereof in a y direction being periodically altered. The zigzag arrangements each include an arrangement Rb and an arrangement Rc repeatedly provided at predetermined intervals in the y direction. The arrangement Rb includes the conductive particles arranged at a positive inclination, and the arrangement Rc includes the conductive particles arranged at a negative inclination. This configuration can form a pseudo random regular disposition.

The present invention relates to a power module and a method for manufacturing same, the power module including: a lower ceramic substrate; an upper ceramic substrate which is disposed spaced apart from the upper portion of the lower ceramic substrate, and on the lower surface of which a semiconductor chip is mounted; spacers each having one end bonded to the lower ceramic substrate and the other end bonded to the upper ceramic substrate; first bonding layers each bonding the one end of each spacer to the lower ceramic substrate; and second bonding layers each bonding the other end of each spacer to the upper ceramic substrate. The present invention maintains a constant distance between the lower ceramic substrate and the upper ceramic substrate by having the spacers arranged therebetween, and thus is advantageous in that the semiconductor chip can be protected and heat dissipation efficiency can be increased.

This paste composition includes silver particles (A), a thermosetting resin (B), a curing agent (C), and a solvent (D). A shrinkage rate after curing of the paste composition is 15% or less.

The present invention relates to a ceramic substrate with a heat sink and a manufacturing method thereof. The ceramic substrate comprises: a ceramic substrate including a metal layer on at least one surface of a ceramic base; and a heat sink that is bonded to one surface of the ceramic substrate and has a multi-layer structure that refrigerant enters and exits. The present invention has an integrated structure in which the heat sink having a multi-layer structure that refrigerant enters and exits is bonded to the ceramic substrate, and thus is capable of effectively dissipating heat generated from a semiconductor chip.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

A semiconductor device includes a dielectric layer disposed over a substrate and having a top surface; a top metal layer disposed within a portion of the dielectric layer and extending to the top surface of the dielectric layer; a first passivation layer disposed over the top surface of the dielectric layer; a redistribution layer (RDL) disposed over the first passivation layer, the RDL including an un-etched portion having a first thickness; and a second passivation layer disposed over the RDL, the second passivation layer having a second thickness over the un-etched portion of the RDL that is 40% or more of the first thickness.

A laminated structure includes a cooling member; a circuit board provided on the cooling member and having a through hole; a device provided on the circuit board and including a quantum bit; and a bonding material configured to bond together the circuit board and the device. The bonding material includes a first bonding portion contacting a portion of an upper surface of the cooling member exposed from the through hole, an upper surface of the circuit board, and a lower surface of the device; and a second bonding portion provided around the first bonding portion in plan view and contacting the upper surface of the circuit board and the lower surface of the device. A thermal conductivity of the first bonding portion is higher than that of the second bonding portion. An elastic modulus of the second bonding portion is lower than that of the first bonding portion.

A chip package structure includes an assembly containing an interposer and semiconductor dies; a packaging substrate attached to the assembly through solder material portions; and a lid structure attached to the packaging substrate. The lid structure includes: a first plate portion having a first thickness and located in an interposer-projection region having an areal overlap with the interposer in a plan view; a second plate portion having a second thickness that is less than the first thickness, laterally surrounding, and adjoined to, the first plate portion, and located outside the interposer-projection region; and a plurality of foot portions adjoined to the second plate portion, laterally spaced from the first plate portion, and attached to a respective top surface segment of the packaging substrate through a respective adhesive portion.

A system and method for forming a bonded integrated circuit, comprising dispensing a dielectric material on a first side of an integrated circuit, shaping the dielectric material on the first side of the integrated circuit to form a first dielectric surface; and dispensing a conductive material between a first printed circuit board (PCB) top surface and a top surface of the integrated circuit to form a first connection, the first connection situated on the first dielectric surface.