Stacked semiconductor packages with features to mitigate trace exposer and associated systems and methods are disclosed herein. In some embodiments, the stacked semiconductor package includes a base substrate, a stack of dies carried by the base substrate, and a mold material deposited at least partially encapsulating the stack of dies. The base substrate can include an active surface and a back surface opposite the active surface. Further, the active surface can include one or more cuts into a peripheral portion of the active surface (e.g., stepped structures at the peripheral edges of the base substrate). The base substrate can also include a plurality of bond pads carried by the active surface over the peripheral portion. Still further, the mold material can fill each of the one or more cuts in the active surface, thereby insulating the bond pads from exposure at a sidewall of the stacked semiconductor package.

Disclosed are embodiments of a semiconductor package. The semiconductor package may include: a first substrate; a chip stack on the first substrate, wherein the chip stack comprises one or more semiconductor chips that are stacked to be inclined at a first angle relative to a top surface of the first substrate; a tilt support structure, wherein the tilt support structure is between a first portion of the chip stack and the first substrate; and an anti-slip structure in contact with an end portion of the chip stack.

A semiconductor package may include a package substrate; first semiconductor chips sequentially stacked on an upper surface of the package substrate; a second semiconductor chip on an uppermost first semiconductor chip among the first semiconductor chips, the second semiconductor chip having an overhang region protruding from one side of the uppermost first semiconductor chip and an overlapping region overlapping the uppermost first semiconductor chip, the second chip pads including first bonding pads in the overhang region and second bonding pads in the overlapping region; first conductive bumps respectively on the first bonding pads; second conductive bumps respectively on the second bonding pads; vertical wires extending from the first conductive bumps to substrate pads of the package substrate, respectively; and a molding member covering the first semiconductor chips, the second semiconductor chip, and the vertical wires.

A package and method is disclosed. In one example, the package comprises a carrier comprising a component mounting area from which a tie bar extends, the tie bar being configured for being clamped by an encapsulation tool pin during encapsulation, an electronic component mounted on the component mounting area, and an encapsulant encapsulating at least part of the electronic component and at least part of the carrier, wherein a sidewall of the package has a step between a first vertical sidewall section and a second vertical sidewall section; wherein the first vertical sidewall section has a notch in the encapsulant and a part of the second vertical sidewall section exposes the tie bar.

A method for producing a molded electronic devices includes providing a first metallic frame including a plurality of die pads and a plurality of first connectors that hold the die pads in place. A vertical power semiconductor die is attached to each die pad. One or more second metallic frames are vertically aligned with the first metallic frame. Each second metallic frame includes a plurality of first contact pads and a plurality of second connectors that hold the first contact pads in place. Each of the first contact pads is attached to a load terminal of one of the vertical power semiconductor dies without any direct physical or electrical connection between the first metallic frame and the second metallic frame. The vertical power semiconductor dies are encapsulated in a mold compound. The first connectors and the second connectors are severed to yield individual molded electronic devices.

Various embodiments of fanout packages are disclosed. A method of forming a microelectronic assembly is disclosed. The method can include bonding a first surface of at least one microelectronic substrate to a surface of a carrier using a direct bonding technique without an intervening adhesive, the microelectronic substrate having a plurality of conductive interconnections on at least one surface of the microelectronic substrate. The method can include applying a molding material to an area of the surface of the carrier surrounding the microelectronic substrate to form a reconstituted substrate. The method can include processing the microelectronic substrate. The method can include singulating the reconstituted substrate at the area of the surface of the carrier and at the molding material to form the microelectronic assembly.

Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

The present disclosure is directed to semiconductor packages manufactured utilizing a leadframe with varying thicknesses. The leadframe with varying thicknesses has a reduced likelihood of deformation while being handled during the manufacturing of the semiconductor packages as well as when being handled during a shipping process. The method of manufacturing is not required to utilize a leadframe tape based on the leadframe with varying thicknesses. This reduces the overall manufacturing costs of the semiconductor packages due to the reduced materials and steps in manufacturing the semiconductor packages as compared to a method that utilizes a leadframe tape to support a leadframe. The semiconductor packages may include leads of varying thicknesses formed by utilizing the leadframe of varying thicknesses to manufacture the semiconductor packages.

An optoelectronic package includes a first and a second redistribution layers, a plurality of first and second metal pillars, an optoelectronic chip, a first and a second insulation layers and a processing component. The first metal pillars are disposed on the first redistribution layer. The optoelectronic chip includes a wiring layer, an active structure and a main layer. The wiring layer is electrically connected to the first metal pillars. The main layer is disposed between the wiring layer and the active structure. The first insulation layer disposed on the first redistribution layer covers the optoelectronic chip and the first metal pillars. The processing component is electrically connected to the first redistribution layer which is located between the processing component and the optoelectronic chip. The second metal pillars and the second insulation layer are disposed between the first redistribution layer and the second redistribution layer.

An electronic device includes a leadframe where the leadframe includes a first set of leads, a second set of leads, and conductive pads. A heat sink is attached to the conductive pads. The heat sink includes a pair of heat sink pads separated by a gap, and a die attach pad. The die attach pad has a semi-circular shape and is connected to an end of each of the pair of heat sink pads to form a U-shape. The die attach pad further includes an airgap prevention feature. A die is attached to the heat sink and wire bonds connect the die to the leadframe. A mold compound encapsulates the heat sink, the die, and the wire bonds.