A semiconductor device of embodiments includes: a die pad; a semiconductor chip fixed on the die pad; and a sealing resin covering the semiconductor chip and at least a part of the die pad. The sealing resin has a first protruding portion provided on one side surface and a second protruding portion provided on another side surface. The cross-sectional area of the first protruding portion is equal to or more than 10% of the maximum cross-sectional area of the sealing resin. The cross-sectional area of the second protruding portion is equal to or more than 10%; of the maximum cross-sectional area. The maximum cross-sectional area is equal to or more than 6 mm.sup.2.

A method for manufacturing a semiconductor apparatus includes the steps of: applying a first adhesive having heat dissipation property and thermosetting property onto each of surfaces of a plurality of devices joined to a surface of a substrate, and thereafter mounting heat dissipation blocks, and performing bonding by heat treatment; applying a second adhesive having heat dissipation property and thermosetting property onto each of surfaces of the heat dissipation blocks, so as to be higher than a height A of a molding resin that seals the devices in a later step; and curing the second adhesives by heat treatment while aligning, by using thicknesses of the second adhesives, heights to surfaces of the second adhesives so that the heights are matched with the height A of the molding resin.

A semiconductor device includes a heat sink, a base material including an insulating layer and mounted on the heat sink on one side in a first direction, a first conductive layer bonded to the base material and located on a side opposite the heat sink with respect to the base material, a first semiconductor element bonded to the first conductive layer, a first power terminal electrically connected to the first conductive layer and the first semiconductor element, and a sealing resin covering the first conductive layer and the first semiconductor element. The first power terminal is exposed from the sealing resin. The first power terminal is surrounded by a peripheral edge of the sealing resin as viewed in the first direction.

An interconnect for a semiconductor device includes a first bonding pad having a first surface, a second bonding pad having a second surface bonded to the first surface of the first bonding pad, and a first guard dummy adjacent the second bonding pad and having a third surface substantially coplanar with the second surface of the second bonding pad.

A semiconductor device has a first substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. An interconnect bridge is disposed over the first semiconductor die and second semiconductor die. The interconnect bridge has a second substrate. A conductive trace is formed over the second substrate. The conductive trace is electrically coupled from the first semiconductor die to the second semiconductor die. An IPD is also formed over the second substrate. The IPD is electrically coupled between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first substrate, first semiconductor die, second semiconductor die, and interconnect bridge.

A method of manufacturing a semiconductor device with an attached battery is provided. The method includes affixing a semiconductor die to a die pad region of a first battery lead of a leadframe. The first battery lead of the leadframe is separated from a second battery lead of the leadframe. An encapsulant encapsulates the semiconductor die and portions of the first and second battery leads of the leadframe. The battery is affixed to an exposed portion of the first battery lead of the leadframe such that a first terminal of the battery is conductively connected to the first battery lead. An exposed portion of the second battery lead of the leadframe is bent to overlap a top surface portion of the battery such that a second terminal of the battery conductively connected to the second battery lead.

A semiconductor package includes: a first redistribution structure; a first chip disposed on the first redistribution structure; a molding member at least partially surrounding the first chip and disposed on the first redistribution structure; a plurality of conductive pillars penetrating the molding member in a vertical direction; a support structure disposed between adjacent conductive pillars of the plurality of conductive pillars and disposed on the first redistribution structure; a second redistribution structure disposed on the molding member, the plurality of conductive pillars, and the support structure; a second chip disposed on the second redistribution structure and overlapping the plurality of conductive pillars; and a heat dissipation chip overlapping the first chip in the vertical direction.

A semiconductor package according to some example embodiments may include a chip base including a main chip region and an edge region around the main chip region, a device layer on the chip base, a wiring layer on the device layer, an upper insulating stack on the wiring layer, and a trench on the edge region, the trench recessed from the upper insulating stack to the device layer, and an inner surface of the trench exposed to an outside of the semiconductor chip.

A method including the following steps is provided. A seed layer is formed. Conductive material is formed on the seed layer by performing an electrolytic plating process with an electrolytic composition comprising: a source of copper ions; an accelerator agent; and a suppressor agent, by structure represented (1) or (2): ##STR00001##
wherein x is between 2 and 50, y is between 5 and 75, and R1 is an alkyl group of 1 to 3 carbon atoms. A portion of the seed layer exposed by the conductive material is removed.

A method of forming a semiconductor structure includes forming a photoresist over a first conductive pattern. The method further includes patterning the photoresist to define a plurality of first openings. The method further includes depositing a conductive material in each of the plurality of first openings. The method further includes disposing a molding material over the first conductive pattern, wherein the molding material surrounds a die. The method further includes removing a portion of the molding material to form a second opening. The method further includes disposing a dielectric material into the opening to form a dielectric member. The method further includes forming a redistribution structure over the molding material and the dielectric member, wherein the redistribution structure includes an antenna structure over the dielectric member and electrically connected to the die.