A semiconductor device includes a first die, a second die, a first redistribution layer (RDL) structure and a connector. The RDL structure is disposed between the first die and the second die and is electrically connected to the first die and the second die and includes a first polymer layer, a second polymer layer, a first conductive pattern and an adhesion promoter layer. The adhesion promoter layer is between and in direct contact with the second polymer layer and the first conductive pattern. The connector is disposed in the first polymer layer and in direct contact with the second die and the first conductive pattern.

According to one embodiment, a semiconductor chip includes a first electrode, a semiconductor layer, a second electrode, a third electrode, and a metallic layer. The semiconductor layer includes a first portion, a second portion, and a third portion that is located between the first portion and the second portion. The semiconductor layer is provided on a first side of the first electrode in a first direction. The second electrode is over the first portion in the first direction. The third electrode is over the second portion in the first direction. The metallic layer is provided on a second side of the first electrode and is under the third portion in the first direction.

Disclosed herein are methods of forming a microelectronic component. In some embodiments, the method includes providing an element having a metallization layer that comprises a field dielectric and a conductive feature embedded in the field dielectric. The metallization layer also comprises a surface that includes the field dielectric and the conductive feature. The method further includes forming a copper feature over the conductive feature, forming a dielectric layer over sidewalls of the copper feature, and then planarizing the dielectric layer to form a hybrid bonding surface, where the copper feature is exposed at the hybrid bonding surface.

A display device is provided and includes: a plurality of display modules disposed on the first bearing surface, each of the display modules including a plurality of display units; a plurality of first functional elements located on the first bearing surface, and each of the first functional elements disposed between any two of the display units; and a plurality of second functional elements located on the second bearing surface; wherein a function of each of the second functional elements is the same as a function of each of the first functional elements, and processing capability of each of the second functional elements is different from processing capability of each of the first functional elements.

Disclosed herein are microelectronic assemblies, as well as related apparatuses and methods. In some embodiments, a microelectronic assembly may include a plurality of dies stacked vertically; a trench of dielectric material extending through the plurality of dies; a conductive via extending through the trench of dielectric material; and a plurality of conductive pathways between the plurality of dies and the conductive via, wherein individual ones of the conductive pathways are electrically coupled to the conductive via and to individual ones of the plurality of dies, and wherein the individual ones of the plurality of conductive pathways have a first portion including a first material and a second portion including a second material different from the first material.

A semiconductor package includes; a redistribution wiring layer, a controller chip centrally disposed on the redistribution wiring layer, a first sealant disposed on the redistribution wiring layer, wherein the controller chip is buried in the first sealant, through vias connected to the redistribution wiring layer through the first sealant, and a sub-package disposed on an upper surface of the first sealant. The sub-package may include a first stack structure disposed to one side of the controller chip on the upper surface of the first sealant and including vertically stacked chips, a second stack structure disposed to another side of the controller chip on the upper surface of the first sealant adjacent to the first stack structure in a first horizontal direction and including vertically stacked chips, and a second sealant sealing the first stack structure and the second stack structure.

An electronic package is provided, where a laterally diffused metal oxide semiconductor (LDMOS) type electronic structure is mounted onto a complementary metal oxide semiconductor (CMOS) type electronic element to be integrated into a chip module, thereby shortening electrical transmission path between the electronic structure and the electronic element so as to reduce the communication time between the electronic structure and the electronic element.

A system comprises: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power switch including a drain terminal, a source terminal, and a gate terminal; and a controller configured to detect a change in current at the source terminal of the power switch using a complex impedance of a metal trace connected to the source terminal of the power switch, and control a gate control signal to the gate terminal based on the detected change in current.

A semiconductor device package and a method of manufacturing a semiconductor device package are provided. The semiconductor device package includes a carrier, a first component, a second component, and a protective element. The first component and the second component are arranged side by side in a first direction over the carrier. The protective element is disposed over a top surface of the carrier and extending from space under the first component toward a space under the second component. The protective element includes a first portion and a second portion protruded oppositely from edges of the first component by different distances, and the first portion and the second portion are arranged in a second direction angled with the first direction.

According to one embodiment, a semiconductor device includes: a first frame; a first chip on the first frame; a second frame spaced apart from the first frame in a first direction; a second chip on the second frame; and a first joint terminal above the second chip. The first frame includes a first terminal portion extending toward the second frame. The first joint terminal includes a second terminal portion extending toward the first frame. The second terminal portion includes first and second projecting portions each of which projects toward the first frame and which are spaced apart from each other in a second direction. An end portion of the first projecting portion and an end portion of the second projecting portion are each joined on the first terminal portion.