A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, each of the tiers individually comprising a conductive structure and an insulative structure, strings of memory cells vertically extending through the stack structure, the strings of memory cells comprising a channel material vertically extending through the stack structure, and conductive rails laterally adjacent to the conductive structures of the stack structure. The conductive rails comprise a material composition that is different than a material composition of the conductive structures of the stack structure. Related memory devices, electronic systems, and methods are also described.

A semiconductor device includes active regions extending in a first direction on a substrate; a gate electrode intersecting the active regions on the substrate, extending in a second direction, and including a contact region protruding upwardly; and an interconnection line on the gate electrode and connected to the contact region, wherein the contact region includes a lower region having a first width in the second direction and an upper region located on the lower region and having a second width smaller than the first width in the second direction, and wherein at least one side surface of the contact region in the second direction has a point at which an inclination or a curvature is changed between the lower region and the upper region.

A transistor is provided. The transistor includes a substrate, a first diffusion region, a first contact structure, a second diffusion region, a second contact structure, and a gate structure. The first diffusion region is in the substrate. The first contact structure is over the substrate electrically coupling the first diffusion region. The first contact structure includes a first conductive material. The second diffusion region is in the substrate. The second contact structure is in the substrate electrically coupling the second diffusion region. The second contact structure includes a second conductive material different from the first conductive material. The gate structure is between the first contact structure and the second contact structure.

A semiconductor package may include a first semiconductor chip and a second semiconductor chip on a top surface thereof. The first semiconductor chip may include a first bonding pad on a top surface of a first semiconductor substrate and a first penetration via on a bottom surface of the first bonding pad and penetrating the first semiconductor substrate. The second semiconductor chip may include a second interconnection pattern on a bottom surface of a second semiconductor substrate and a second bonding pad on a bottom surface of the second interconnection pattern and coupled to the second interconnection pattern. The second bonding pad may be directly bonded to the first bonding pad. A width of the first penetration via may be smaller than that of the first bonding pad, and a width of the second interconnection pattern may be larger than that of the second bonding pad.

Embodiments disclosed herein include an electronic package that comprises a substrate with a first surface and a second surface opposite from the first surface. In an embodiment, the substrate comprises glass. In an embodiment, the electronic package further comprises an opening through the substrate from the first surface to the second surface, where the opening comprises a first end proximate to the first surface of the substrate, a second end proximate to the second surface of the substrate, and a middle region between the first end and the second end. In an embodiment, the middle region has a discontinuous slope at junctions with the first end and the second end.

An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature having a two-dimensional material layer, a second conductive feature disposed over the first conductive feature, and a dielectric material disposed adjacent the first and second conductive features. The dielectric material extends from a level of a bottom of the first conductive feature to a level of a top of the second conductive feature.

The semiconductor stacked package including a semiconductor die. The semiconductor die includes a substrate, a transistor, and a through-silicon-via (TSV) structure. The transistor is over the substrate. The TSV structure penetrates the substrate and comprises a first conductive layer, a second conductive layer, and a dielectric layer. The dielectric layer is between the first conductive layer and the second conductive layer. The method of manufacturing the same includes the following steps: forming a via hole in a substrate; forming a first conductive layer in the via hole; forming a dielectric layer in the via hole and over the first conductive layer; forming a second conductive layer in the via hole and over the dielectric layer; and forming a transistor over the substrate. The first conductive layer, the dielectric layer, and the second conductive layer collectively form a through-silicon-via (TSV) structure.

A semiconductor chip may include: a semiconductor substrate; a through silicon via that vertically penetrates the semiconductor substrate; an integrated device layer on a first surface of the semiconductor substrate and including integrated devices; a multi-wiring layer on the integrated device layer and including layers of wires; an upper metal layer on the multi-wiring layer and connected to the wires; and a lower metal layer on a second surface of the semiconductor substrate. The semiconductor substrate may include a lower bump area on the second surface of the semiconductor substrate, the lower bump area including bump pads thereon, and the lower metal layer may be on a periphery of the lower bump area.

A semiconductor structure includes a plurality of first wafers and a through-substrate via (TSV). The plurality of first wafers include a plurality of conductive connection lines. Each of the conductive connection lines is located in the corresponding first wafer. The through-substrate via passes through the plurality of first wafers and a plurality of end portions of the plurality of conductive connection lines. The plurality of end portions are embedded in the through-substrate via.

A semiconductor package may include a first semiconductor chip including a first area, a second area, an optical conversion device that is in the first area, and vertical wires that are in the second area, the optical conversion device being configured to receive an optical signal and convert it into an electrical signal, a first dummy chip on the first semiconductor chip and at least partially overlapping with the first area, a second semiconductor chip at least partially overlapping with the second area, a wiring layer between the first and second semiconductor chips and including first wiring patterns that connect the vertical wires and the second semiconductor chip, and second wiring patterns that at least partially overlap with the first dummy chip, and a second dummy chip on the first dummy chip and on the second semiconductor chip.