A device package comprising an integrated cooling assembly comprising a semiconductor stack and a cooling channel, wherein the semiconductor stack comprises a first semiconductor device and a second semiconductor device stacked vertically above the first semiconductor device; and spacers extending between opposing surfaces of the first and second semiconductor devices to space the first semiconductor device away from the second semiconductor device, the spacers and the opposing surfaces of the first and second semiconductor devices collectively define the cooling channel therebetween; and the spacers comprise via electrically connecting the first semiconductor device and the second semiconductor device.

Embodiments disclosed herein include electronic package and methods of forming such packages. In an embodiment, an electronic package comprises a mold layer and a first die embedded in the mold layer. In an embodiment, the first die comprises first pads at a first pitch and second pads at a second pitch. In an embodiment, the electronic package further comprises a second die embedded in the mold layer, where the second die comprises third pads at the first pitch and fourth pads at the second pitch. In an embodiment, a bridge die is embedded in the mold layer, and the bridge die electrically couples the second pads to the fourth pads.

A semiconductor device includes a semiconductor substrate, a TiW layer arranged on the semiconductor substrate a Ti layer arranged on the TiW layer, a Ni alloy layer arranged on the Ti layer, and an Ag layer arranged on the Ni alloy layer, wherein the Ag layer and the Ni alloy layer comprise side faces fabricated by at least one wet etching process, and wherein the Ti layer and the TiW layer comprise side faces fabricated by a dry etching process.

A semiconductor device includes: a lower semiconductor structure including one or more first lower test pads, one or more second lower test pads that are alternately arranged with the one or more first lower test pads, and a lower test terminal that is electrically connected to the second lower test pad through a second lower test line; and an upper semiconductor structure positioned over the lower semiconductor structure and including an upper test pad and an upper test terminal that is electrically connected to the upper test pad through an upper test line, wherein, when the lower semiconductor structure and the upper semiconductor structure are aligned, the upper test pad overlaps with and contacts a corresponding first lower test pad among the one or more first lower test pads, and is spaced apart from the second lower test pad that is adjacent to the corresponding first lower test pad.

In one example, an electronic device includes an electronic component including a first side, a second side opposite to the first side, a lateral side connecting the first side to the second side, bond pads adjacent to the first side, and a passivation layer over the first side and including openings exposing the bond pads. A redistribution structure is over the passivation layer and the bond pads. The redistribution structure includes a conductive structure coupled to the bond pads and a dielectric structure. The conductive structure includes outward terminals. External interconnects are coupled to the outward terminals and a protection layer covers the lateral side of the electronic component. Other examples and related methods are also disclosed herein.

A chip structure includes a photonic integrated circuit chip including a waveguide extending in a horizontal direction, an electronic integrated circuit chip on the photonic integrated circuit chip, a silicon block above the photonic integrated circuit chip in a vertical direction and spaced from the electronic integrated circuit chip in the horizontal direction, a first insulating layer at least partially surrounding the electronic integrated circuit chip and the silicon block, and a silicon support on an upper surface of the electronic integrated circuit chip, an upper surface of the silicon block, and an upper surface of the first insulating layer, where the silicon support includes a micro lens, the micro lens is below an upper surface of the silicon support, and the silicon block includes a material that is the same as a material of the silicon support.

Implementations of a silicon-in-insulator (SOI) semiconductor die may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be included through a silicon layer coupled to a insulative layer.

An offset interposer includes a land side including land-side ball-grid array (BGA) and a package-on-package (POP) side including a POP-side BGA. The land-side BGA includes two adjacent, spaced-apart land-side pads, and the POP-side BGA includes two adjacent, spaced-apart POP-side pads that are coupled to the respective two land-side BGA pads through the offset interposer. The land-side BGA is configured to interface with a first-level interconnect. The POP-side BGA is configured to interface with a POP substrate. Each of the two land-side pads has a different footprint than the respective two POP-side pads.

A semiconductor device, including: a semiconductor chip having an element forming surface; an insulating layer formed on the element forming surface of the semiconductor chip; a barrier conductive layer formed on the insulating layer; a pad wiring layer including a plurality of conductive layers, one of the plurality of conductive layers including an eaves portion protruding to an outward direction; a bonding member that is bonded to the pad wiring layer and supplies electric power to an element of the element forming surface; and a coating insulating film that is selectively formed on the insulating layer below the eaves portion, exposes an upper surface of the insulating layer to a peripheral region of the pad wiring layer, and coats both an upper surface and a side surface of an end portion of the barrier conductive layer.

A semiconductor package includes a memory die stack having a clock signal shared by lower and upper bytes. Each of a plurality of memory dies constituting the memory die stack of the semiconductor package includes a first clock circuit configured to generate a read clock signal for a lower byte and an upper byte constituting a data width of the memory die, and a plurality of first die bond pads corresponding to the number of ranks of a memory system including the memory die, and each of the plurality of first die bond pads is set for each rank. The first clock circuit is connected to, among the plurality of first die bond pads, a die bond pad corresponding to a rank to which the memory die belongs.