A package includes a memory stack attached to a logic device, the memory stack including first memory structures, a first redistribution layer over and electrically connected to the first memory structures, second memory structures on the first redistribution layer, a second redistribution layer over and electrically connected to the second memory structures, and first metal pillars on the first redistribution layer and adjacent the second memory structures, the first metal pillars electrically connecting the first redistribution layer and the second redistribution layer, wherein each first memory structure of the first memory structures includes a memory die comprising first contact pads and a peripheral circuitry die comprising second contact pads, wherein the first contact pads of the memory die are bonded to the second contact pads of the peripheral circuitry die.

A semiconductor package is provided and includes: a base substrate; an interposer package on the base substrate; and first and second semiconductor chips on the interposer package, wherein the interposer package includes: a first redistribution structure including a first insulating layer, a second insulating layer on the first insulating layer, and first and second redistribution layers respectively disposed on the first and second insulating layers; a bridge chip on a bottom surface of the first redistribution structure; a connection structure on the bottom surface of the first redistribution structure and including a plurality of wiring layers electrically connected to the first and second semiconductor chips; and a bonding structure disposed on a third insulating layer on the second insulating layer and bonding each of the first and second semiconductor chips to the first redistribution structure, wherein the second redistribution layer includes a contact plug within the third insulating layer.

Provided is an electronic component including a pad region including a plurality of pads extending along corresponding extension lines and arranged in a first direction, and a signal wire configured to receive a driving signal from the pad region, wherein the plurality of pads include a plurality of first pads arranged continuously and a plurality of second pads arranged continuously, and extension lines of the plurality of first pads substantially converge into a first point and extension lines of the plurality of second pads substantially converge into a second point different from the first point.

A substrate includes: a first printed circuit board layer including a first insulating layer and a first wiring layer, disposed on a lower surface of the first insulating layer; a second wiring layer, disposed on an upper surface of the first insulating layer; a bridge disposed above the first printed circuit board layer and including circuit wirings; a first bridge insulating layer and a second bridge insulating layer, disposed in the bridge and on which the circuit wirings are disposed, respectively; and a second printed circuit board layer including a second insulating layer surrounding side surfaces of the bridge and covering the first insulating layer and the second wiring layer. A first stacking direction in which the first insulating layer and the second insulating layer are stacked and a second stacking direction in which the first bridge insulating layer and the second bridge insulating layer are stacked are different.

The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.

A package structure and method for forming the same are provided. The package structure includes a substrate having a front surface and a back surface, and a die formed on the back surface of the substrate. The package structure includes a first through via structure formed in the substrate, a conductive structure formed in a passivation layer) over the front surface of the substrate. The conductive structure includes a via portion in direct contact with the substrate. The package structure includes a connector (formed over the via portion, wherein the connector includes an extending portion directly on a recessed top surface of the via portion.

A package structure and method for forming the same are provided. The package structure includes a substrate having a front surface and a back surface, and a die formed on the back surface of the substrate. The package structure includes a first through via structure formed in the substrate, a conductive structure formed in a passivation layer) over the front surface of the substrate. The conductive structure includes a via portion in direct contact with the substrate. The package structure includes a connector (formed over the via portion, wherein the connector includes an extending portion directly on a recessed top surface of the via portion.

An electronic device package and method of fabricating such a package includes a first and second components encapsulated in a volume of molding material. A surface of the first component is bonded to a surface of the second component. Upper and lower sets of redistribution lowers that include, respectively, first and second sets of conductive interconnects are formed on opposite sides of the molding material. A through-package interconnect passes through the volume of molding material and has ends that terminate, respectively, within the upper set of redistribution layers and within the lower set of redistribution layers.

A die includes a substrate, a conductive pad, a connector a protection layer, and a passivation layer. The conductive pad is disposed over the substrate. The connector is disposed on the conductive pad. The connector comprises a seed layer and a conductive post on the seed layer. The protection layer laterally covers the connector. The passivation layer is disposed between the protection layer and the conductive pad. The conductive post is separated from the passivation layer and the protection layer by the seed layer.

A semiconductor structure includes a first semiconductor device, a second semiconductor device, a connection device and a redistribution circuit structure. The first semiconductor device is bonded on the second semiconductor device. The connection device is bonded on the second semiconductor device and arranged aside of the first semiconductor device, wherein the connection device includes a first substrate and conductive vias penetrating through the first substrate and electrically connected to the second semiconductor device. The redistribution circuit structure is located over the second semiconductor device, wherein the first semiconductor device and the connection device are located between the redistribution circuit structure and the second semiconductor device. The redistribution circuit structure and the first semiconductor device are electrically connected to the second semiconductor device through the conductive vias of the connection device.