A chip package unit, a method of manufacturing the same, and package structure formed by stacking the same are provided. At least one first connecting pad, at least one second connecting pad, and at least one third connecting pad of a flexible printed circuit (FPC) board in the chip package unit are electrically connected with one another by circuit of the FPC board. At least one die pad disposed on a front surface of a chip is electrically connected with the first connecting pad first and then electrically connected with the outside by the second connecting pad or the third connecting pad. Thereby the chip of the chip package unit can be electrically connected with the outside by the front surface or a back surface thereof. Therefore, not only production is reduced due to simplified production process and energy saved, volume of the package structure is also reduced.

A bonded structure is disclosed. The bonded structure can include a substrate. The bonded structure can include a first memory unit disposed on the substrate. The first memory unit can have a first stack of memory dies and a first logic controller disposed on the first stack. The first logic controller can manage data communicated to or from the first stack of memory dies. The bonded structure can also include a processor die hybrid bonded to the first memory unit along a bonding interface and a vertical interconnect connecting the substrate to the processor die. The bonded structure can further include a second memory unit disposed on the substrate. The second memory unit can include a second stack of memory dies and a second logic controller disposed on the second stack. The second logic controller can manage data communicated to or from the second stack of memory dies.

A semiconductor package may include: a package substrate; a base semiconductor chip above the package substrate, the base semiconductor chip including a base pad in contact with the package substrate; at least one stacked semiconductor chip above the base semiconductor chip, the at least one stacked semiconductor chip including a chip pad connected to the package substrate; and an organic layer between the package substrate and the at least one stacked semiconductor chip in a first direction perpendicular to a surface of the package substrate; at least one connection structure in the organic layer, the at least one connection structure connecting the package substrate and the chip pad of the at least one stacked semiconductor chip, wherein the at least one connection structure includes a filling layer and a surface layer surrounding at least a portion of the filling layer.

A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.

A semiconductor device has a photonic semiconductor die. The photonic semiconductor die is disposed on a carrier with a photonic circuit of the photonic semiconductor die oriented toward the carrier. An e-bar is disposed on the carrier. An encapsulant is deposited over the photonic semiconductor die and e-bar. A first surface of the encapsulant is backgrinded to expose the e-bar. A first build-up interconnect structure is formed over the first surface of the encapsulant. A second build-up interconnect structure is formed over a second surface of the encapsulant. The photonic circuit is exposed through an opening of the second build-up interconnect structure.

A packaging structure and methods of forming the same are described. In some embodiments, the structure includes a through via, a first semiconductor die disposed adjacent the through via, a stress relief layer disposed on side surfaces of the through via and side surfaces of the first semiconductor die, and a molding material disposed on the stress relief layer and between the through via and the first semiconductor die. Top surfaces of the through via, the semiconductor die, and the molding material are substantially coplanar.

A semiconductor package structure includes a first package and a second package. The first package includes a first redistribution layer, a second redistribution layer, a third redistribution layer, at least one first chip, at least one second chip, multiple first conductive elements, multiple second conductive elements, a first encapsulant, a second encapsulant, and multiple solders. The second redistribution layer is located between the first redistribution layer and the third redistribution layer and includes multiple chip connectors. Each chip connector includes a connecting pad, a nickel layer, and a gold layer. The connecting pad has top surface and a peripheral surface. The nickel layer covers the top surface and the peripheral surface of the connecting pad, and the gold layer covers the nickel layer located on the top surface of the connecting pad. The second encapsulant is disposed on the third redistribution layer and is electrically connected to the first encapsulant.

A display panel includes a circuit substrate, pixel structures and a molding layer. The circuit substrate has first pad structures and second pad structures. The pixel structures are disposed above a display region of the circuit substrate. Each of at least a portion of the pixel structures includes a first light emitting diode, a first conductive block, and a first conductive connection structure. The first light emitting diode is disposed on a corresponding first pad structure. The first conductive block is disposed on a corresponding second pad structure. The first conductive connection structure electrically connects the first light emitting diode to the first conductive block. The molding layer is located above the circuit substrate and surrounds the first light emitting diode and the first conductive block. The first conductive connection structure is located on the molding layer.

A package structure is provided, which includes a redistribution structure, an interposer substrate disposed over the redistribution structure, a first semiconductor die disposed between the redistribution structure and the interposer substrate, a second semiconductor die partially overlapping the first semiconductor die in a direction perpendicular to a surface of the redistribution structure, and a first protective layer surrounding the first semiconductor die.

Provided are an intelligent sensor system architecture and an implementation method and apparatus therefor. The system architecture includes a sensor module and an artificial intelligence processing module, where the sensor module and the artificial intelligence processing module are connected to each other in a monolithic integration manner or a modular integration manner; the sensor module is configured to acquire a measurement signal and convert the measurement signal into an electrical signal; and the artificial intelligence processing module is configured to execute a corresponding artificial intelligence processing operation according to the electrical signal generated by the sensor module.