A die attach film structure includes a dicing film, an insulating adhesion layer including an upper surface and a lower surface opposite the upper surface, the lower surface of the insulating adhesion layer contacting an upper surface of the dicing film and including an insulating filler, and a conductive adhesion layer contacting an upper surface of the insulating adhesion layer and including a conductive filler.

A method for fabricating semiconductor device includes the steps of first providing a first wafer and a second wafer, performing a first dicing process to separate the first wafer into first dies, bonding the first dies onto the second wafer, forming a first molding layer around the first dies, forming first bumps on the first dies, performing a second dicing process to separate the second wafer for forming second dies, and then bonding the first dies onto a third wafer.

A method includes positioning a discrete component assembly on a support fixture of a component transfer system, the discrete component assembly including a dynamic release tape including a flexible support layer, and a dynamic release structure disposed on the flexible support layer, and a discrete component adhered to the dynamic release tape. The method includes irradiating the dynamic release structure to release the discrete component from the dynamic release tape.

A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4). ##STR00001##

The present disclosure provides a method for manufacturing a semiconductor package. The method includes disposing a first semiconductor substrate on a temporary carrier and dicing the first semiconductor substrate to form a plurality of dies. Each of the plurality of dies has an active surface and a backside surface opposite to the active surface. The backside surface is in contact with the temporary carrier and the active surface faces downward. The method also includes transferring one of the plurality of dies from the temporary carrier to a temporary holder. The temporary holder only contacts a periphery portion of the active surface of the one of the plurality of dies.

A method of manufacturing a semiconductor device having first and second main surfaces opposite to each other. The method includes: forming a first electrode at the first main surface of the semiconductor wafer; applying a first tape to the second main surface of the semiconductor wafer; forming roughness at a portion of a surface of the first tape; applying a second tape to an outer peripheral portion of the semiconductor wafer, so as to cover the portion of the surface of the first tape, with the roughness formed thereon, at the second main surface of the semiconductor wafer, to cover a portion of the first main surface of the semiconductor wafer, and to cover a side surface of the semiconductor wafer; heating the semiconductor wafer after the first and second tapes are applied; and subsequently forming a plated film at the surface of the first electrode by a plating treatment.

A semiconductor package and a method of forming the same are provided. The semiconductor package includes a semiconductor die and a redistribution structure disposed on the semiconductor die. The redistribution structure includes an alignment auxiliary layer, a plurality of dielectric layers and a plurality of conductive patterns. The alignment auxiliary layer has a light transmittance for a light with a wavelength range of about 350-550 nm lower than that of one of the plurality of dielectric layers.

The present disclosure discloses a method of fabricating a semiconductor integrated circuits package with solder wettable plating and relates to a semiconductor package substrate with side wettable flank (SWF) features and a method of manufacturing thereof. In particular, the disclosure relates to leadless semiconductor devices and an associated method of manufacturing such devices. An object of the present disclosure is to provide a manufacturing technique allowing full plating of the side flanks by conventional electro-plating with an external conductive media.

An electronic device includes a conductive lead, a semiconductor die, a package structure enclosing the semiconductor die and a portion of the conductive lead, and a non-conductive die attach film extending between the conductive lead and the semiconductor die, with a lateral side of the semiconductor die extending beyond an end of the die attach film by a non-zero gap distance. A method of fabricating an electronic device includes performing a first singulation process that separates portions of a die attach film on a wafer, performing a second singulation process that separates a semiconductor die from the wafer having a portion of the die attach film, and attaching the semiconductor die to a lead frame with the die attach film extending between a prospective lead portion and the side of the semiconductor die.

Provided are a semiconductor package, in which an underfill material may enter a gap easily, and a method of manufacturing the semiconductor package. Here, the semiconductor package has a die and a plurality of pillars disposed on one surface of the die, and a thickness of the die corresponding to a region having pillars on the one surface of the die is less than a thickness of the die corresponding to a region without pillars on the one surface of the die.