An electronic device includes a conductive lead, a semiconductor die, a package structure enclosing the semiconductor die and a portion of the conductive lead, and a non-conductive die attach film extending between the conductive lead and the semiconductor die and having a thickness less than 50 m. A method of fabricating an electronic device includes singulating portions of a non-conductive die attach film on a carrier, partially singulating prospective die areas from a front side of a wafer, removing wafer material from a back side of the wafer to separate a semiconductor die from the wafer, and attaching a backside the semiconductor die to a singulated portion of the non-conductive die attach film on the carrier.

Some embodiments of the present disclosure discloses a method for transferring electronic devices. The method includes providing an electronic device array structure, a providing carrier, and a plurality of second electronic devices arranged on the providing carrier. Wherein the electronic device array structure includes a carrier and a flawed group arranged on the carrier. The flawed group includes a plurality of first electronic devices and a vacancy. A patterned light is formed to irradiate the providing carrier by using the electronic device array structure.

A method of forming an integrated circuit (IC) is provided. The method includes applying a die attach film to a first surface of a wafer opposite a second surface. The method also includes applying a passivation layer to the second surface of the wafer. The method further includes patterning the passivation layer to define a number of scribe lines. The method yet further includes applying a dicing tape having a nonconductive material to the die attach film. The nonconductive material is resistant to plasma etching. The method includes plasma etching the wafer to form dies of a plurality of dies supported by the dicing tape based on the scribe lines.

A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.

A manufacturing method of an electronic device including following steps is provided. A first substrate is provided. A thermal release adhesive layer is provided on the first substrate. A thinning process is performed on the first substrate to form a first thinned substrate. A cutting process is performed on the first thinned substrate to form a first sub-substrate. The thermal release adhesive layer is separated from the first thinned substrate or the first sub-substrate. In the manufacturing method of the electronic device provided in one or more embodiments of the disclosure, the manufacturing process of the electronic device may be simplified, and/or defects of the resultant electronic device may be reduced.

According to one embodiment, a semiconductor device includes: a circuit board; a first semiconductor chip mounted on a face of the circuit board; a resin film covering the first semiconductor chip; and a second semiconductor chip having a chip area larger than a chip area of the first semiconductor chip, the second semiconductor chip being stuck to an upper face of the resin film and mounted on the circuit board. The resin film entirely fits within an inner region of a bottom face of the second semiconductor chip when viewed in a stacking direction of the first and second semiconductor chips.

A method is of manufacturing a plurality of devices by dividing a device wafer along a plurality of planned dividing lines intersecting each other, the device wafer having a device surface on which each of the devices is formed in each of regions partitioned by the planned dividing lines. The method includes: directly bonding a carrier plate to the device surface of the device wafer; after the bonding of the carrier plate, dicing the device wafer supported by the carrier plate along the planned dividing lines to thereby form a plurality of devices; and after the forming of the plurality of devices, separating the plurality of devices from the carrier plate.

According to one embodiment, a manufacturing method of a semiconductor device, comprising: attaching a dicing tape to a ring frame, the dicing tape including a base, an adhesive provided on an upper surface of the base and including a material capable of changing in property by light irradiation, and a releasing film; executing light irradiation from below the base, thereby making an adhesivity of a first portion overlapping the releasing film, in an upper surface of the adhesive, different from an adhesivity of a second portion not overlapping the first portion, in the upper surface of the adhesive; attaching a work piece to the adhesive; and singulating a plurality of semiconductor devices by dicing the work piece.

A semiconductor package includes a first redistribution layer which includes a first face and a second face that are opposite to each other in a first direction, a first semiconductor chip on the second face, a second semiconductor chip on the second face a first mold film on the second face, and that covers the first semiconductor chip and the second semiconductor chip, and a bridge die disposed on the first face, and that electrically connects the first semiconductor chip and the second semiconductor chip, wherein the bridge die is covered with a second mold film.

Representative implementations provide techniques for processing integrated circuit (IC) dies and related devices, in preparation for stacking and bonding the devices. The disclosed techniques provide removal of processing residue from the device surfaces while protecting the underlying layers. One or more sacrificial layers may be applied to a surface of the device during processing to protect the underlying layers. Processing residue is attached to the sacrificial layers instead of the device, and can be removed with the sacrificial layers.