Patent classifications
H10P72/0448
Workpiece cutting method and resin applying device
A workpiece cutting method includes: a first step of pasting an expandable sheet on a workpiece; a second step of irradiating, after the first step, the workpiece with laser light to form a modified region and expanding the expandable sheet to divide the workpiece into a plurality of chips, and meanwhile, to form a gap disposed between the plurality of chips and extending to a side surface of the workpiece; a third step of irradiating the expandable sheet with an ultraviolet light after the first step; a fourth step of filling, after the second step and the third step, the gap with resin from an outer edge part of the workpiece including the side surface; a fifth step of curing the resin after the fourth step; and a sixth step of taking out the chips from above the expandable sheet after the fifth step.
Apparatus for treating substrate connected to common duct
The inventive concept provides a substrate treating apparatus. According to the inventive concept, the substrate treating apparatus treats the substrate by supplying a treating liquid on a rotating substrate. The exhaust unit exhausting an atmosphere of an inner space comprises: a first exhaust port introducing the atmosphere of the inner space, a first exhaust line provided to exhaust an atmosphere introduced through the first exhaust port in a first direction and a second exhaust port introducing the atmosphere of the inner space, and a second exhaust line provided to exhaust an atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit so an exhaust direction inside of the first exhaust line and the second exhaust line become a forward direction with respect to a rotation direction of the substrate.
Unit for supplying chemical and apparatus for treating substrate with the unit
The present disclosure provides an apparatus for treating a substrate, comprising: a chemical discharge pipe; a cover configured to surround the chemical discharge pipe; a buffer disposed in a space between the chemical discharge pipe and the cover; a chemical supplier configured to supply a chemical to the chemical discharge pipe; a cleaning liquid supplier configured to supply a cleaning liquid via the cover; and a dry gas supplier configured to supply a dry gas via the cover, wherein the supplied cleaning liquid is sprayed by passing through the buffer via a space between the outside of the chemical discharge pipe and the inside of the cover to clean a tip of the chemical discharge pipe, and the supplied dry gas is sprayed by passing through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the tip of the chemical discharge pipe.
Wafer aligner
A semiconductor wafer transport apparatus includes a frame, a transport arm movably mounted to the frame and having at least one end effector movably mounted to the arm so the at least one end effector traverses, with the arm as a unit, in a first direction relative to the frame, and traverses linearly, relative to the transport arm, in a second direction, and an edge detection sensor mounted to the transport arm so the edge detection sensor moves with the transport arm as a unit relative to the frame, the edge detection sensor being a common sensor effecting edge detection of each wafer simultaneously supported by the end effector, wherein the edge detection sensor is configured so the edge detection of each wafer is effected by and coincident with the traverse in the second direction of each end effector on the transport arm.
Apparatus and method for calibrating a fluid dispenser
Systems and methods are provided for adjusting a fluid dispenser for depositing drops of formable material. According to embodiments, a system obtains an image of a substrate including a film formed on the substrate by curing the formable material deposited by a first dispenser and a second dispenser. Intensity information is obtained for pixels of the image and a difference is determined between intensity values from a portion of the substrate on which the first dispenser deposited drops and intensity values from a portion on which the second dispenser deposited drops, the intensity values corresponding to a region of the substrate associated with a target thickness. Adjustments based on the intensity values are made to change a drop volume and a drop density for nozzles of the first dispenser and nozzles of the second dispenser.
Apparatus and techniques for electronic device encapsulation
A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.
Apparatus for treating a substrate and electrostatic monitoring method of treatment liquid
Provided is an apparatus for treating a substrate. The substrate treating apparatus may include: a substrate support unit supporting a substrate; a nozzle supplying a liquid to the substrate supported on the substrate support unit; a home port in which the nozzle waits; and an electrostatic measurement member measuring an electrostatic amount of a liquid dispensed from the nozzle in the home port.
Photoresist coating apparatus
A photoresist coating apparatus includes a photoresist trap tank temporarily storing a photoresist. A photoresist supply pipe is connected to the photoresist trap tank. A pump is connected to the photoresist supply pipe. A photoresist pressing device is connected to the photoresist supply pipe at a rear of the pump. A photoresist circulation pipe is at a rear of the photoresist pressing device. The photoresist circulation pipe connects the photoresist supply pipe to the photoresist trap tank. A photoresist discharge pipe is connected to the photoresist supply pipe at a rear of the photoresist circulation pipe. A photoresist discharge valve is connected to the photoresist discharge pipe. A photoresist discharge nozzle is connected to the photoresist discharge valve.
Apparatus for treating substrate including interference alleviation unit
Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes: a first process chamber having a first treating space therein; a second process chamber having a second treating space therein; and an exhaust unit configured to exhaust atmospheres of the first treating space and the second treating space, in which the exhaust unit includes an integrated exhaust line in which a pressure reduction unit is installed, a first exhaust line configured to connect the first process chamber and a first point of the integrated exhaust line, a second exhaust line configured to connect the first process chamber and a second point of the integrated exhaust line, and an interference alleviation unit configured to alleviate exhaust interference between the first process chamber and the second process chamber.
Member for semiconductor manufacturing apparatus
A member for a semiconductor manufacturing apparatus, the member has a wafer placement surface and includes: a plurality of gas outflow passages each having an opening on the wafer placement surface; a common gas passage that is in communication with the plurality of gas outflow passages; and at least one gas inflow passage that is in communication with the common gas passage from a surface of the member for a semiconductor manufacturing apparatus that is on an opposite side from the wafer placement surface, the number of the at least one gas inflow passage being smaller than the number of the gas outflow passages in communication with the common gas passage. Among the plurality of gas outflow passages, a gas outflow passage closer to the gas inflow passage has a larger gas passage resistance than a gas outflow passage farther from the gas inflow passage.