A method includes forming a first masking layer over a substrate, the first masking layer including a first mask line and a second mask line, heating respective top surfaces of the first mask line and the second mask line with polarized light, and forming a second masking layer over the first masking layer with an area selective deposition process. The second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.

Systems and methods to process a semiconductor workpiece are provided. One example method includes providing a semiconductor workpiece having a subsurface damage region. The method includes performing a treatment process on the subsurface damage region. The treatment process includes providing a treatment emission of radiation from a radiation source to the subsurface damage region of the workpiece at a non-perpendicular angle relative to the subsurface damage region.

A method to process a semiconductor device: processing the substrate forming a first level with a first single-crystal silicon-layer, first transistors, input-and-output (IO) circuits; forming a first metal-layer; forming a second metal-layer including a power-delivery network, where interconnection of the first transistors includes the first metal-layer and the second metal-layer; processing a second level including second transistors with metal gates and a first array of memory-cells; processing a third level including a plurality of third transistors with metal gates and a second array of memory-cells; third level disposed over the second level; forming a fourth metal-layer over a third metal-layer over the third-level; processing a fourth level including a second single-crystal silicon-layer, fourth level is disposed over the fourth metal-layer; forming a via disposed through the second and third levels, connections of the device to external devices includes the IO-circuits; the second level is disposed over the first level.

A variety of footed and leadless semiconductor packages, with either exposed or isolated die pads, are described. Some of the packages have leads with highly coplanar feet that protrude from a plastic body, facilitating mounting the packages on printed circuit boards using wave-soldering techniques.

A semiconductor device includes: a semiconductor body having a first surface and a second surface; a plurality of semiconductor device elements in the semiconductor body at the first surface; a wiring area over the first surface of the semiconductor body; and an impurity in the semiconductor body. A profile of concentration of the impurity has a penetration depth from the second surface into the semiconductor body along a vertical direction. The profile of concentration has a concentration plateau along a vertical segment ranging from 30% to 70% of the penetration depth, the plateau having a fluctuation of the concentration of less than 20%.

A protective film forming agent that, in dicing of a semiconductor wafer, is used to form a protective film on the surface of the semiconductor wafer, can form a protective film that has excellent laser processability, and has excellent solubility of a light-absorbing agent; and a method for producing a semiconductor chip using the protective film forming agent. The protective film forming agent includes a water-soluble resin, a light-absorbing agent, a basic compound, and a solvent. The basic compound is an alkylamine, an alkanolamine, an imidazole compound, ammonia, or an alkali metal hydroxide. The light-absorbing agent content of the protective film forming agent is 0.1-10 mass % (inclusive).

A wafer is processed by causing a cutting blade to cut into an outer circumferential surplus region of a first wafer from the front surface side by a predetermined thickness and executing cutting along the outer circumferential edge to form an annular step part in the outer circumferential surplus region, bonding the front surface side of the first wafer and the front surface side of a second wafer to form a bonded wafer, forming an annular modified layer by positioning the focal point of a laser beam with a wavelength having transmissibility with respect to the first wafer to the inside of the first wafer and executing irradiation with the laser beam along the boundary between a device region and the outer circumferential surplus region from the back surface side, and grinding the back surface side of the first wafer to execute thinning to a predetermined finished thickness.

A wafer is processed by causing a cutting blade to cut into an outer circumferential surplus region of a first wafer from the front surface side by a predetermined thickness and executing cutting along the outer circumferential edge to form an annular step part in the outer circumferential surplus region, bonding the front surface side of the first wafer and the front surface side of a second wafer to form a bonded wafer, forming an annular modified layer by positioning the focal point of a laser beam with a wavelength having transmissibility with respect to the first wafer to the inside of the first wafer and executing irradiation with the laser beam along the boundary between a device region and the outer circumferential surplus region from the back surface side, and grinding the back surface side of the first wafer to execute thinning to a predetermined finished thickness.

In a dividing method of a wafer, first edge parts and second edge parts that are the edges of chips are melted by executing irradiation with a laser beam. Therefore, the edges of the chips can be planarize. In addition, cracks, chipping, and so forth caused in the edges of the chips can be coupled. Therefore, it becomes possible to repair at least part of processing strain of the edges of the chips. As a result, a flexural strength of the chips can be enhanced.

A method and apparatus for diffusing a dopant within a semiconductor device is described. The method includes performing a dynamic surface anneal in which a substrate is placed inside of a process volume with a mixture of an inert gas and a small amount of oxygen gas. The surface of the substrate is then exposed to one or more rapid laser pulses. The rapid laser bursts diffuse dopant from a doped layer into the substrate. The doped layer is formed during a previous process operation. The temperature and number of laser pulses control the amount of diffusion of the dopant into the substrate. Other dynamic surface anneal operations may be optionally performed before or after the oxygenated dynamic surface anneal operation.