The present invention relates to a handling system for fetching a substrate out of a substrate container, a use of such a handling system, a module comprising a substrate container and such a handling system and a method for fetching a substrate out of a substrate container. The handling system comprises a main assembly and a sub assembly. The sub assembly is moveably attached to the main assembly and moveable relative to the main assembly between a fetch position and a rest position. The sub assembly extends in the fetch position over the main assembly to fetch the substrate out of the substrate container and lies on the main assembly in the rest position to provide a contact between the main assembly and the substrate. The main assembly comprises a plurality of suction means to fasten and straighten the substrate.

Provided is a transfer apparatus. The transfer apparatus includes, in addition to a non-contact chuck that lifts and holds a workpiece in a non-contact manner, a plurality of ultrasonic vibrators that radiate ultrasonic waves. The plurality of ultrasonic vibrators are configured to radiate the ultrasonic waves to generate a standing wave that attracts the workpiece, and are configured for the non-contact chuck to hold the workpiece at a position where forces attracting in a plurality of directions toward outside of the workpiece are balanced when viewed from a direction facing the workpiece.

Disclosed is a wafer backside cleaning method, comprising: using a wafer clamping part to hold a wafer, a gap being formed between the wafer clamping part and the wafer; injecting a protective gas into the gap at a first flow rate; adjusting the flow rate of the protective gas from the first flow rate to a second flow rate, and rotating the wafer under the drive of the first rotational speed of the wafer clamping part to clean the backside of the wafer; adjusting the rotational speed of the wafer clamping part from the first rotational speed to a second rotational speed, so that the wafer is driven by the wafer clamping part to rotate for the drying process; stopping rotating the wafer, adjusting the flow rate of the protective gas to the first flow rate again from the second flow rate, and then taking out the wafer; and stopping injecting the protective gas after the wafer is taken out. According to the present invention, adjusting the switching logic and flow rate of the protective gas can ensure that the front side of the wafer is not prone to adsorption of external impurities during a wafer backside cleaning process, thereby improving the wafer backside cleaning stability.

Embodiments described herein relate to an apparatus that includes a first adapter that includes a plurality of first concentric separators, and a second adapter over the first adapter, where the second adapter includes a plurality of second concentric separators. In an embodiment, the second concentric separators are interleaved with the first concentric separators. In an embodiment, a sealing medium is provided between each of the plurality of first concentric separators, and the second concentric separators are inserted into a surface of the sealing medium.

A pick-and-place apparatus includes a filter assembly configured to supply vacuum pressure and air pressure from a vacuum ejector to at least one picker nozzle. The filter assembly includes a first pneumatic line connecting a first port connected to the vacuum ejector and a second port connected to the at least one picker nozzle, a filter in the first pneumatic line and filtering gas flowing from the second port to the first port, a second pneumatic line branched from the first pneumatic line in a front-end portion and in a rear-end portion of the filter to allow gas to bypass the filter, a first shut-off valve in the first pneumatic line to block flow of gas from the first port to the second port, and a second shut-off valve in the second pneumatic line to block flow of gas from the second port to the first port.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); wherein said external robot (500) comprises an articulated arm (510) arranged to handle both treated substrates and untreated substrates as well as substrates support devices.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).

A wafer cleaning apparatus may include: a center chuck configured to adhere a center of one surface of a wafer and rotate around a center axis of the center chuck, that extends in a first direction, to rotate the wafer; a side chuck including at least one grip part configured to support an edge of the one surface of the wafer; a housing including a guide part configured to guide the side chuck to move horizontally in a second direction perpendicular to the first direction; and at least one nozzle part configured to spray a cleaning solution toward the one surface of the wafer.

A die placement system provides a tip body and die placement head to ensure planarity of a die to substrate without the need for calibration prior to each pick and place operation. A self-aligning tip incorporated into a tip body aids in die placement/attachment. This tip provides for global correction of planarity errors that exist between a die and substrate, regardless of whether those errors stem from gantry (i.e. die-side misalignment) or machine deck tool (i.e. substrate-side misalignment) misalignment.

A system for detecting the presence of a wafer on a wafer handling robot. The system includes a robot having an end effector with a ledge portion having an opening; a vacuum pump; a conduit fluidly coupling the vacuum pump to the opening in the ledge portion; a pressure sensor located along the conduit to determine whether a measured pressure is within a target pressure range; and a wafer configured to be supported by the at least one end effector and spaced apart from the ledge portion by an air gap. When the wafer is supported by the at least one end effector in a proper position, the measured pressure is within the target pressure range. When the wafer is not supported by the wafer support structure or is supported by the wafer support structure in an improper position, the measured pressure is outside of the target pressure range.