In a described example, an apparatus includes: a metal leadframe including a dielectric die support formed in a central portion of the leadframe, and having metal leads extending from the central portion, portions of the metal leads extending into the central portion contacted by the dielectric die support; die attach material over the dielectric die support; a semiconductor die mounted to the dielectric die support by the die attach material, the semiconductor die having bond pads on a device side surface facing away from the dielectric die support; electrical connections extending from the bond pads to metal leads of the leadframe; and mold compound covering the semiconductor die, the electrical connections, the dielectric die support, and portions of the metal leads, the mold compound forming a package body.

A method for manufacturing an electronic package comprises providing at least one electronic component, the at least one electronic component including at least one non-groundable thermal output, providing a substrate in which a ground plane is enclosed in or supported by the substrate, defining at least one thermally conductive pathway extending between an interface exposed on the substrate and the ground plane such that the interface is electrically isolated from the ground plane, and mounting the electronic component to the substrate, the mounting including thermally coupling the output to the interface with at least one thermally conductive member.

A chip package assembly includes a first high-power chip, a second low-power chip, a thermal cooling device and a heterogeneous thermal interface material (HTIM). The thermal cooling device may overlie the first chip and the second chip. The HTIM includes a first thermal interface material (TIM) and a second TIM. The first TIM overlies the first chip, and the second TIM overlies the second chip. The first TIM includes a material that has a first thermal conductivity and a first modulus of elasticity. The first TIM can reflow when the first die reaches a first TIM reflow temperature. The second TIM comprises at least a polymer material. The second TIM has a second modulus of elasticity that is greater than the first modulus of elasticity and a second thermal conductivity that is less than the first thermal conductivity.

A method of repairing a display panel and a repaired display panel are provided. The display panel includes a panel substrate, a plurality of micro LEDs arranged on the panel substrate, and a molding member covering the plurality of micro LEDs. The molding member includes a first molding member and a second molding member disposed in a region surrounded by the first molding member. The second molding member has a composition or a shape different from that of the first molding member, and the second molding member surrounds at least one side surface of the plurality of micro LEDs.

A thermal conduction sheet holder include, in the following order, an elongated carrier film, a plurality of thermal conduction sheets, and an elongated cover film covering the plurality of thermal conduction sheets, the shortest distance between adjacent thermal conduction sheets is 2 mm or more, the plurality of thermal conduction sheets are disposed at intervals in a longitudinal direction of the carrier film and the cover film, and the plurality of thermal conduction sheets are peelable from the cover film and the carrier film.

Provided herein is a method for producing a die attach adhesive film sheet, comprising: Providing a first release substrate layer, a die attach adhesive layer, and a dicing tape layer, and joining the first release substrate layer, the die attach adhesive layer, and the dicing tape layer in that order to form a multi-layer structure; Working the multi-layer structure to form a circular preformed die attach adhesive film sheet, wherein during said working the first release substrate receives a z-directional indentation therein; and Removing the first release substrate with the z-directional indentation therein from the die attach adhesive layer, and placing in its stead a second release substrate in contact with the die attach adhesive layer.

A semiconductor packaging device includes a packaging module, a heat dissipation cover and a thermal interface material layer. The package module includes a substrate, and a working chip mounted on the substrate. The heat dissipation cover includes a metal cover fixed on the substrate and covering the working chip, an accommodating recess located on the metal cover to accommodate the working chip, and a plurality of protrusive columns respectively formed on the metal cover and distributed within the accommodating recess at intervals. The depth of the accommodating recess is greater than the height of each protrusive column, and the accommodating recess is greater than the working chip. The thermal interface material layer is non-solid, and located within the accommodating recess between the protrusive columns to wrap the protrusive columns and contact with the working chip, the metal cover and the protrusive columns.

A semiconductor package includes a lower redistribution wiring layer; and a first semiconductor device on the lower redistribution wiring layer, the first semiconductor device being connected to the lower redistribution wiring layer via conductive bumps, wherein the lower redistribution wiring layer includes: a first redistribution wire in a first lower insulating layer; an insulating structure layer having an opening that exposes a portion of the first redistribution wire, the insulating structure layer including a first photosensitive insulating layer, a light blocking layer on the first photosensitive insulating layer, and a second photosensitive insulating layer on the light blocking layer; a second redistribution wire in the opening of the insulating structure layer, the second redistribution wire including a redistribution via contacting the first redistribution wire, and a redistribution line stacked on the redistribution via; and bonding pads bonded to the conductive bumps and electrically connected to the second redistribution wire.

A method of manufacturing a semiconductor device is provided. The method includes forming a package leadframe including a die pad, a first ridge formed at a first outer edge of the die pad, a second ridge formed at a second outer edge of the die pad opposite of the first outer edge and separate from the first ridge, and a plurality of leads surrounding the die pad. A semiconductor die is attached to the die pad by way of a die attach material. The semiconductor die is located on the die pad between the first ridge and the second ridge. An encapsulant encapsulates the semiconductor die and at least a portion of the package leadframe.

Disclosed embodiments provide light-emitting diodes (LEDs) and interconnect structures that employ particularly shaped electrodes and a conductive metal-based adhesive that are selected to provide a flexible, robust interconnect that is capable of resisting lateral shear forces, while maintaining a low bond process temperature that is process compatible with other LED component materials. In a non-limiting aspect, disclosed embodiments employ a barrier coating on the interconnect or bonding materials comprising a conductive metal-based adhesive to inhibit moisture and air contact with the conductive metal-based adhesive, thereby preventing or mitigating migration of metal ions in the conductive metal-based adhesive in operation.