An amplifier circuit that includes an RF amplifier; an impedance matching network; a higher order harmonic termination circuit; a fundamental frequency matching circuit; and an integrated passive device (IPD) that includes a silicon carbide (SiC) substrate. The integrated passive device (IPD) includes one or more reactive components of the fundamental frequency matching circuit and one or more reactive components of the higher order harmonic termination circuit.

According to one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of stacked bodies on a substrate, each of the stacked bodies includes a plurality of semiconductor chips. The method further includes forming a plurality of first wires on the stacked bodies. The first wires connecting the stacked bodies to each other. The method further includes forming a resin layer on the stacked bodies and the first wires, then thinning he resin layer until the first wires are exposed.

A semiconductor package includes: a package substrate including a first substrate region and a second substrate region, wherein the first substrate region at least partially surrounds the second substrate region; a semiconductor chip disposed on the package substrate; a mold provided on the package substrate and covering the semiconductor chip; and a shield provided on the mold and the package substrate, wherein a thickness of the first substrate region is smaller than a thickness of the second substrate region.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

There is provided a bonding wire for semiconductor devices that exhibits a favorable bondability even when being applied to wedge bonding at the room temperature, and also achieves an excellent bond reliability. The bonding wire includes a core material of Cu or Cu alloy (hereinafter referred to as a Cu core material), and a coating containing a noble metal formed on a surface of the Cu core material. A concentration of Cu at a surface of the wire is 30 to 80 at %.

A described example includes: a semiconductor die having a device side surface and an opposing backside surface, the backside surface mounted to a die pad of a lead frame, the lead frame comprising conductive leads spaced from the die pad; a conductor layer overlying the device side surface; bond pads including bond pad conductors formed in the conductor layer, a nickel layer over the bond pad conductors, and a palladium or gold layer over the nickel layer; conductor traces formed in the conductor layer, the conductor traces free from the nickel layer and the palladium or gold layer; bond wires bonded to the bond pads electrically coupling the bond pads to conductive leads; and mold compound covering the semiconductor die, the bond pads, the bond wires, and portions of the lead frame, wherein portions of the conductive leads are exposed from the mold compound to form terminals.

According to one embodiment, a semiconductor device includes a wiring substrate having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface. A first electrode is on the first surface. A semiconductor element is on the wiring substrate and electrically connected to the first electrode. A resin layer covers the semiconductor element and the first surface from a first direction orthogonal to the first surface. A portion of the resin layer contacts the side surface of the wiring substrate from a second direction parallel to the first surface. The resin layer has an outside side surface that is substantially parallel to the first direction.

A semiconductor package includes a substrate, a first semiconductor die disposed on the substrate, a second semiconductor die stacked on the first die and offset from it in a first direction and a second direction that are perpendicular to each other, and a third semiconductor die stacked on the first and second dies and offset from them in the first direction. The first semiconductor die includes a first pad and a second pad, arranged successively in the second direction. The second semiconductor die includes a third pad and a fourth pad, and the third semiconductor die includes a fifth pad and a sixth pad, each arranged successively in the second direction. A first conductive pattern connects the first and fifth pads, while a second conductive pattern connects the second, fourth, and sixth pads. The first and second conductive patterns are spaced apart from the third pad.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

Implementations of an image sensor package may include an image sensor die including at least one bond pad thereon; a bond wire wirebonded to the at least one bond pad; and an optically transmissive lid coupled to the image sensor die with an optically opaque film adhesive over the at least one bond pad. The bond wire may extend through the optically opaque film adhesive to the at least one bond pad.