A semiconductor device includes: a first chip mounting portion and a second chip mounting portion adjacent to each other in a first direction; a first semiconductor chip and a third semiconductor chip adjacent to each other in a second direction and mounted on the first chip mounting portion; and a second semiconductor chip mounted on the second chip mounting portion. The third semiconductor has: one or more first transformers used to transmit a signal from the first semiconductor chip to the second semiconductor chip; and one or more second transformers used to transmit a signal from the second semiconductor chip to the first semiconductor chip. In plan view, the first and second transformers are arranged along a side facing the second semiconductor chip, and the one of more first transformers are arranged closer to the first semiconductor chip than the one of more second transformers.

A semiconductor chip is provided. The semiconductor chip may include a front side including a control chip contact and a first controlled chip contact, a back side including a second controlled chip contact, a backside metallization formed over the back side in contact with the second controlled chip contact, and a stop region extending at least partially along an outer edge of the back side between a contact portion of the backside metallization and the outer edge of the back side. The contact portion is configured to be attached to an electrically conductive structure by a die attach material, a surface of the stop region is recessed with respect to a surface of the contact portion, and/or the surface of the stop region has a lower wettability with respect to the die attach material than the contact portion.

A metal film, a manufacturing method of the metal film, semiconductor device, and a manufacturing method of semiconductor device are provided with high crack resistance (higher hardness) during wire bonding. The Metal film has first metal crystal grains, and the second metal crystal grains. Each of the first metal crystal grains has dislocations. Each of the second metal crystal grains has no dislocations. The number of the first metal crystal grains having the dislocations is larger than the number of the second metal crystal grains having no dislocations.