Patent classifications
H10W72/5434
Wire bonded semiconductor device package
In a described example, an apparatus includes: a metal leadframe including a dielectric die support formed in a central portion of the leadframe, and having metal leads extending from the central portion, portions of the metal leads extending into the central portion contacted by the dielectric die support; die attach material over the dielectric die support; a semiconductor die mounted to the dielectric die support by the die attach material, the semiconductor die having bond pads on a device side surface facing away from the dielectric die support; electrical connections extending from the bond pads to metal leads of the leadframe; and mold compound covering the semiconductor die, the electrical connections, the dielectric die support, and portions of the metal leads, the mold compound forming a package body.
SEMICONDUCTOR PACKAGE
A semiconductor package includes a package substrate including first and second power P-pads and first and second signal P-pads, a lower layer chip including first and second power L-pads and first and second signal L-pads, an upper layer chip offset from the lower layer chip and including first and second power U-pads and first and second signal U-pads. The first power and signal P-pads are alternatingly stacked, the first power and signal L-pads are alternatingly stacked, and the first power and signal U-pads are alternatingly stacked. The second power and signal P-pads are alternatingly stacked, the second power and signal L-pads are alternatingly stacked, and the second power and signal U-pads are alternatingly stacked. Bonding wires connect the first and second power U-pads, the first and second power L-pads, the second power U-pads and P-pads, and the second signal U-pads and P-pads.
WIRE BOND OBSTRUCTION MITIGATION USING WIRE BOND STUD BUMPS
Aspects of the disclosure advantageously provide one or more methods of improving microelectronic production by mitigating obstructions via strategic placement of wire bond stud bumps. A microelectronic assembly and a method of producing the same are provided. The method includes placing a set of stud bumps on a substrate defining a boundary of a location for placement of a component, wherein the set of stud bumps comprises a first stud bump and a second stud bump, the first stud bump comprising a greater amount of wire bonding material than the second stud bump; placing the component at the location on the substrate via a layer of a binding material; and forming a wire bond between the component and the first stud bump. In one or more embodiments, a microelectronic assembly is produced in accordance with the method described above.
CHIP PACKAGING STRUCTURE
A chip packaging structure includes a first substrate, an image sensor chip, a first molding layer, conductive pillars, metal wires, an adhesive layer, a second substrate, and a second molding layer. The first substrate includes traces between its upper surface and lower surface. The image sensor chip is fixed on the first substrate. The first molding layer is disposed on the first substrate and covers a side surface of the image sensor chip. The conductive pillars are disposed in the first molding layer, and the metal wires electrically connects the image sensor chip to the conductive pillars. The adhesive layer is disposed on the first molding layer and surrounds the image sensor chip. The second substrate is fixed on the adhesive layer. The second molding layer is disposed on the first molding layer and covers a side surface of the adhesive layer and a side surface of the second substrate.
Packages with electrical fuses
In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.
REPEATER SCHEME FOR INTER-DIE SIGNALS IN MULTI-DIE PACKAGE
Systems, methods, and devices related to techniques for repeating inter-die signals within a multi-die package of a memory device are disclosed. The multi-die package includes a memory stack including a first memory die handling interfacing with a host for the package and at least one second memory die coupled to and configured to communicate with the first memory die via an inter-die connection. A technique involves incorporating the use of a multiplexer positioned in front of the transmitter of each die to facilitate repetition of inter-die signals within the memory stack as needed depending on various factors associated with the memory stack, such as, but not limited to, the type of signal, the intended recipient of the inter-die signals, and the stack height of the memory stack.