A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.

A semiconductor device according to the present disclosure includes: a lead frame having a plurality of die pad portions electrically independent from each other; a power semiconductor element provided on each of the die pad portions; a wire electrically connecting the power semiconductor element and the lead frame; an epoxy-based resin provided on at least a part of the lead frame; and a sealing resin covering at least each of the die pad portions, the power semiconductor element, the wire, and the epoxy-based resin.

A bonding region is specified by having a horizontal line partially constituting crosshairs displayed on a monitor of a wire bonding apparatus superimposed on a first line segment of a first marker, and having a vertical line partially constituting the crosshairs superimposed on a first line segment of a second marker.

Aspects of the disclosure advantageously provide one or more methods of improving microelectronic production by mitigating obstructions via strategic placement of wire bond stud bumps. A microelectronic assembly and a method of producing the same are provided. The method includes placing a set of stud bumps on a substrate defining a boundary of a location for placement of a component, wherein the set of stud bumps comprises a first stud bump and a second stud bump, the first stud bump comprising a greater amount of wire bonding material than the second stud bump; placing the component at the location on the substrate via a layer of a binding material; and forming a wire bond between the component and the first stud bump. In one or more embodiments, a microelectronic assembly is produced in accordance with the method described above.

Implementations of a substrate may include a first set of tie bars; a second set of tie bars; and a plurality of leads coupled between the first set of tie bars and the second set of tie bars. The first set of tie bars may intersect with the second set of tie bars. Each intersection of the first set of tie bars and the second set of tie bars may be downset from the plurality of leads.

The present invention can be applied to a technical field regarding a display device, and relates to, for example, a display device using a micro light-emitting diode (LED) and a module-type display device using same. The display device of the present invention may comprise: a first substrate comprising a first electrode placed on a first surface and a second electrode placed on a second surface and electrically connected to the first electrode; a second substrate placed on the first substrate and comprising a connection wire that defines multiple individual pixel regionsthe second substrate being placed on the first substrate so as to have an exposure part through which at least a part of the first electrode of the first substrate is exposed; a connection electrode connecting the first electrode of the first substrate to the connection wire of the second substrate while being in contact with the exposure part; and light-emitting diodes connected to the connection wire of the second substrate.

A recording element unit includes a first electrode pad, a second electrode pad, and a wire for electrically connecting the first electrode pad and the second electrode pad. The wire has a plurality of bending points at which the wire is bent in the direction of extension of the wire between a first connection point and a second connection point. The plurality of bending points include a first bending point at a height from the first connection point of at least 100 m and not more than 200 m, a second bending point at a distance from the first bending point in the horizontal direction of at least 100 m and not more than 270 m, and a third bending point at a distance from the intermediate point between the first electrode pad and the second electrode pad in the horizontal direction of within 150 m.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of 30 to 30 with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is 30 to 30.

An electronic device that includes a substrate and a die disposed on the substrate, the die having an active surface. Wire bonds are attached from the active surface of the die to the substrate. A radiation barrier is attached to the substrate and disposed over the die. The radiation barrier is configured to mitigate electromagnetic radiation exposure to the die. A mold compound is formed over the die, the wire bonds, and the radiation barrier.

A method of testing a bonded wire on a wire bonding machine is provided. The method includes the steps of: (a) bonding a portion of a wire to a bonding location using a wire bonding tool on a wire bonding machine to form a bonded portion of the wire; (b) moving the wire bonding tool away from the bonded portion of the wire after step (a) with the wire engaged with the wire bonding tool; and (c) moving the wire bonding tool along a motion profile after step (b), with the wire engaged with the wire bonding tool to test the wire.